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NPN TRANSISTOR. DSM80101M Datasheet

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NPN TRANSISTOR. DSM80101M Datasheet






DSM80101M TRANSISTOR. Datasheet pdf. Equivalent




DSM80101M TRANSISTOR. Datasheet pdf. Equivalent





Part

DSM80101M

Description

NPN TRANSISTOR



Feature


ADVANCE INFORMATION DSM80101M NPN TRANS ISTOR WITH DUAL SERIES SWITCHING DIODE Features Integrates one NPN Transisto r (Q1) and two Switching Diodes (D1, D2 ) in a Single Compact Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “ Green” Device (Note 3) Mechanical Da ta Case: SOT26 Case Material: Molded Plastic, “Green” Moldi.
Manufacture

Diodes

Datasheet
Download DSM80101M Datasheet


Diodes DSM80101M

DSM80101M; ng Compound. UL Flammability Classificat ion Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matt e Tin Finish Annealed over Copper Leadf rame (Lead-Free Plating). Solderable pe r MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.01 grams (Approximate) Top View 654 D1 D 2 Q1 12 3 Device Schematic 654 D1 Q1 D2 123 Top Vi.


Diodes DSM80101M

ew Pin Configuration Ordering Informati on (Note 4) Notes: Part Number DSM801 01M-7 Case SOT26 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fu lly EU Directive 2002/95/EC (RoHS) & 20 11/65/EU (RoHS 2) compliant. 2. See htt p://www.diodes.com/quality/lead_free.ht ml for more information about Diodes In corporated’s definitions of Halogen- and Antimony-free, ".


Diodes DSM80101M

Green" and Lead-free. 3. Halogen- and An timony-free "Green” products are defi ned as those which contain <900ppm brom ine, <900ppm chlorine (<1500ppm total B r + Cl) and <1000ppm antimony compounds . 4. For packaging details, go to our w ebsite at http://www.diodes.com/product s/packages.html. Marking Information 101M YM 101M = Product Type Marking C ode (See Electrical .

Part

DSM80101M

Description

NPN TRANSISTOR



Feature


ADVANCE INFORMATION DSM80101M NPN TRANS ISTOR WITH DUAL SERIES SWITCHING DIODE Features Integrates one NPN Transisto r (Q1) and two Switching Diodes (D1, D2 ) in a Single Compact Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “ Green” Device (Note 3) Mechanical Da ta Case: SOT26 Case Material: Molded Plastic, “Green” Moldi.
Manufacture

Diodes

Datasheet
Download DSM80101M Datasheet




 DSM80101M
DSM80101M
NPN TRANSISTOR WITH DUAL SERIES SWITCHING DIODE
Features
Integrates one NPN Transistor (Q1) and two Switching Diodes
(D1, D2) in a Single Compact Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.01 grams (Approximate)
Top View
654
D1 D2
Q1
12
3
Device Schematic
654
D1
Q1
D2
123
Top View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DSM80101M-7
Case
SOT26
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
101M
101M = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb Mar
23
2016
D
Apr
4
May
5
2017
E
Jun
6
2018
F
2019
G
Jul Aug Sep
78 9
2020
H
2021
I
Oct Nov Dec
OND
DSM80101M
Document number: DS37318 Rev. 2 - 2
1 of 6
www.diodes.com
November 2014
© Diodes Incorporated




 DSM80101M
Maximum Ratings Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current @ DC Increment for IC;
IB = 300mA; Test Duration >10s for each Step
Base Current
Symbol
VCBO
VCEO
VEBO
IC(MAX)
ICM
IB
Maximum Ratings D1, D2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 5)
Average Rectified Output Current (Note 5)
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
80
80
6.0
500
0.8
200
DSM80101M
Unit
V
V
V
mA
A
mA
Value
100
75
53
300
200
20
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
600
208
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Symbol Min Typical
BVCBO
BVCEO
BVEBO
ICBO
VCE(SAT)
80
80
6.0
hFE 120 180
Max
100
0.3
350
Unit
V
V
V
nA
V
Test Condition
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 100µA, IC = 0
VCB = 80V, IE = 0
IC = 100mA, IB = 10mA
IC = 10mA, VCE = 1.0V
Electrical Characteristics D1, D2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Leakage Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
IR
CT
trr
Min
75
Max
0.715
0.855
1.0
1.25
0.1
25
2.0
4
Unit
V
V
µA
nA
pF
ns
Test Condition
IR = 100µA
IF = 5.0mA
IF = 10mA
IF = 50mA
IF = 150mA
VR = 75V
VR = 20V
VR = 0V, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DSM80101M
Document number: DS37318 Rev. 2 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated




 DSM80101M
800
700
600
500
400
300
200
100
RJA = 208°C/W
(Note 5)
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
0.60
0.55
0.50
0.45
IB = 5mA
IB = 4mA
IB = 8mA
0.40
0.35
IB = 3mA
0.30
0.25
IB = 2mA
0.20
0.15
0.10
IB = 1mA
0.05
IB = 0.1mA
0
0 2 4 6 8 10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
100
VCB = 80V
IE = 0
10
1
1,000
TA = 150°C
100
TA = 85°C
TA = 25°C
TA = -55°C
DSM80101M
VCE = 5V
10
1 10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
1.2
VCE = 5V
1.0
0.8
TA = -55°C
0.6 TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base Emitter Voltage vs. Collector Current
0.60
f = 1MHz
0.55
0.50
0.45
0.1
-50
-25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Collector Cutoff Current
vs. Ambient Temperature
150
0.40
0
8
16 24
32 40
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Capacitance Characteristics - D1, D2
DSM80101M
Document number: DS37318 Rev. 2 - 2
3 of 6
www.diodes.com
November 2014
© Diodes Incorporated






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