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Monolithic Microwave. CHA6005-QEG Datasheet

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Monolithic Microwave. CHA6005-QEG Datasheet






CHA6005-QEG Microwave. Datasheet pdf. Equivalent




CHA6005-QEG Microwave. Datasheet pdf. Equivalent





Part

CHA6005-QEG

Description

GaAs Monolithic Microwave



Feature


CHA6005-QEG Pout @ 1dBcomp (dBm) & Line ar Gain (dB) Idrain @ 1dBcomp (A) 8-12 GHz High Power Amplifier GaAs Monolithi c Microwave IC Description The CHA6005- QEG is a high power amplifier monolithi c circuit, which integrates two stages and produces 31.5dBm output power assoc iated to a high power added efficiency of 33%. It is designed for a wide range of applications, .
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA6005-QEG Datasheet


United Monolithic Semiconductors CHA6005-QEG

CHA6005-QEG; from professional to commercial communic ation systems. The circuit is manufactu red with a pHEMT process, 0.25µm gate length, via holes through the substrate , air bridges and electron beam gate li thography. It is supplied in a RoHS com pliant SMD package. Main Features ■ High power: 31.5dBm ■ High PAE: 33% Frequency band: 8-12GHz ■ Linear g ain: 20dB ■ DC bias: VD=8Vo.


United Monolithic Semiconductors CHA6005-QEG

lt@Id=420mA ■ 24L-QFN4x5 ■ MSL3 50 45 40 35 30 25 20 15 10 5 0 7 0.7 0.6 0.5 0.4 0.3 Pout_1dBcomp Linear G ain 8 9 10 11 Frequency (GHz) ID (A) 0.2 12 13 Main Electrical Characteri stics Tamb.= +25°C Symbol Parameter Freq Frequency range G Linear Gain P1dB Output Power @ 1dB comp. PAE1dB P ower Added Efficiency @ 1dB comp. Min Typ Max Unit 8 12 GHz 2.


United Monolithic Semiconductors CHA6005-QEG

0 dB 31.5 dBm 33 % Ref. : DSCHA6005-QEG 5070 – 11 Mar 15 1/12 Specifications subject to change without notice Unit ed Monolithic Semiconductors S.A.S. B t. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA6005-Q EG 8-12GHz High Power Amplifier Elect rical Characteristics .

Part

CHA6005-QEG

Description

GaAs Monolithic Microwave



Feature


CHA6005-QEG Pout @ 1dBcomp (dBm) & Line ar Gain (dB) Idrain @ 1dBcomp (A) 8-12 GHz High Power Amplifier GaAs Monolithi c Microwave IC Description The CHA6005- QEG is a high power amplifier monolithi c circuit, which integrates two stages and produces 31.5dBm output power assoc iated to a high power added efficiency of 33%. It is designed for a wide range of applications, .
Manufacture

United Monolithic Semiconductors

Datasheet
Download CHA6005-QEG Datasheet




 CHA6005-QEG
CHA6005-QEG
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-QEG is a high power amplifier
monolithic circuit, which integrates two
stages and produces 31.5dBm output power
associated to a high power added efficiency
of 33%.
It is designed for a wide range of
applications, from professional to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a RoHS compliant SMD
package.
Main Features
High power: 31.5dBm
High PAE: 33%
Frequency band: 8-12GHz
Linear gain: 20dB
DC bias: VD=8Volt@Id=420mA
24L-QFN4x5
MSL3
50
45
40
35
30
25
20
15
10
5
0
7
0.7
0.6
0.5
0.4
0.3
Pout_1dBcomp
Linear Gain
8 9 10 11
Frequency (GHz)
ID (A)
0.2
12 13
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G Linear Gain
P1dB Output Power @ 1dB comp.
PAE1dB Power Added Efficiency @ 1dB comp.
Min Typ Max Unit
8 12 GHz
20 dB
31.5 dBm
33 %
Ref. : DSCHA6005-QEG5070 11 Mar 15
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHA6005-QEG
CHA6005-QEG
8-12GHz High Power Amplifier
Electrical Characteristics
Tamb.= +25°C, VD1,2 = +8.0V
Symbol
Parameter
Min Typ Max Unit
Freq Operating frequency
8 12 GHz
G Small signal gain
19.5 dB
RLin Input Return Loss
14 dB
RLout
Output Return Loss
10 dB
P1dB
Output power @ 1dBcomp
31.5 dBm
P3dB
Output power @ 3dBcomp
32 dBm
PAE1dB Power Added Efficiency @ 1dBcomp
33 %
PAE3dB Power Added Efficiency @ 3dBcomp
35 %
Id_1dBcomp Supply drain current @ 1dBcomp
500 mA
Id_3dBcomp Supply drain current @ 3dBcomp
550 mA
Idq Supply quiescent current
420 mA
VG Gate supply voltage
-0.7 V
These values are representative of onboard measurements and are defined in the reference
plan as defined in the paragraph "Definition of reference planes ".
Ref. : DSCHA6005-QEG5070 11 Mar 15
2/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34




 CHA6005-QEG
8-12GHz High Power Amplifier
CHA6005-QEG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD Drain bias voltage
9.0 V
Id Drain bias current
700 mA
VG Gate bias voltage
-0.25
V
Pin Maximum peak input power overdrive
+18 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
VD1,2
17, 13
VG12
18
Parameter
Drain supply voltage
Gate supply voltage
Values
8
-0.7
Unit
V
V
Ref. : DSCHA6005-QEG5070 11 Mar 15
3/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34



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