PJ2301
20V P-Channel Enhancement Mode MOSFET
FEATURES
R, DS(ON)
VGS@-1.8V,ID@-1.5A=200mΩ
RDS(ON), VGS@-4.5V,ID@-2.2A=105mΩ
Advanced Trench Process Technology
High Density Cell Design For Ultra Low On-Resistance
Specially Designed for DC/DC converters
Low gate charge
Lead free in compliance with EU RoHS 2011/65/EU directive
Green m...
