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Mode MOSFET. PJA3404 Datasheet

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Mode MOSFET. PJA3404 Datasheet






PJA3404 MOSFET. Datasheet pdf. Equivalent




PJA3404 MOSFET. Datasheet pdf. Equivalent





Part

PJA3404

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 5.6A Features  RDS(ON) , VGS@10V, ID@5.6 A<30mΩ  RDS(ON) , VGS@4.5V, ID@3.5 A<45mΩ  Advanced Trench Process Te chnology  Specially Designed for Swi tch Load, PWM Application, etc.  Lea d free in compliance with EU RoHS 2011/ 65/EU directive.  Green molding comp ound as per IEC61249 Std. (Halogen.
Manufacture

Pan Jit International

Datasheet
Download PJA3404 Datasheet


Pan Jit International PJA3404

PJA3404; Free) Mechanical Data  Case: SOT-23 Package  Terminals: Solderable per M IL-STD-750, Method 2026  Approx. Wei ght: 0.0003 ounces, 0.0084 grams  Ma rking: A04 SOT-23 Unit: inch(mm) Max imum Ratings and Thermal Characteristic s (TA=25oC unless otherwise noted) PAR AMETER Drain-Source Voltage Gate-Sour ce Voltage Continuous Drain Current P ulsed Drain Current Power .


Pan Jit International PJA3404

Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperat ure Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL V DS VGS ID IDM PD TJ,TSTG RθJA LIMIT 3 0 +20 5.6 22 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W March 10,201 4-REV.00 Page 1 PPJA3404 Electrical C haracteristics (TA=25oC unless otherwis e noted) PARAMETER.


Pan Jit International PJA3404

Static Drain-Source Breakdown Voltage G ate Threshold Voltage Drain-Source On-S tate Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dy namic Total Gate Charge Gate-Source Cha rge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Ca pacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time T urn-Off Fall Time .

Part

PJA3404

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 5.6A Features  RDS(ON) , VGS@10V, ID@5.6 A<30mΩ  RDS(ON) , VGS@4.5V, ID@3.5 A<45mΩ  Advanced Trench Process Te chnology  Specially Designed for Swi tch Load, PWM Application, etc.  Lea d free in compliance with EU RoHS 2011/ 65/EU directive.  Green molding comp ound as per IEC61249 Std. (Halogen.
Manufacture

Pan Jit International

Datasheet
Download PJA3404 Datasheet




 PJA3404
PPJA3404
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
5.6A
Features
RDS(ON) , VGS@10V, ID@5.6A<30m
RDS(ON) , VGS@4.5V, ID@3.5A<45m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A04
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+20
5.6
22
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3404
PPJA3404
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=5.6A
VGS=4.5V, ID=3.5A
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VDS=15V, ID=5.6A,
VGS=10V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=5.6A,
VGS=10V,
RG=3(Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 -
-
1.0 1.33 2.1
- 27 30
- 39 45
V
V
m
- 0.01 1
uA
-
+10 +100
nA
- 7.8 -
- 1.2 -
- 1.5 -
- 343 -
- 48 -
- 34 -
nC
pF
-3-
40 -
ns
38 -
- 39 -
- - 1.5 A
0.77
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3404
PPJA3404
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Dlode Characterlslcs
Page 3



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