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Mode MOSFET. PJA3414 Datasheet

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Mode MOSFET. PJA3414 Datasheet






PJA3414 MOSFET. Datasheet pdf. Equivalent




PJA3414 MOSFET. Datasheet pdf. Equivalent





Part

PJA3414

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.2A Features  RDS(ON) , VGS@4.5V, ID@5. 2A<36mΩ  RDS(ON) , VGS@2.5V, ID@3. 2A<52mΩ  RDS(ON) , VGS@1.8V, ID@1. 5A<92mΩ  Advanced Trench Process T echnology  Specially Designed for Sw itch Load, PWM Application, etc.  Le ad free in compliance with EU RoHS 2011 /65/EU directive.  Green molding co.
Manufacture

Pan Jit International

Datasheet
Download PJA3414 Datasheet


Pan Jit International PJA3414

PJA3414; mpound as per IEC61249 Std. (Halogen Fre e) Mechanical Data  Case: SOT-23 Pac kage  Terminals: Solderable per MIL- STD-750, Method 2026  Approx. Weight : 0.0003 ounces, 0.0084 grams  Marki ng: A14 SOT-23 Unit: inch(mm) Maximu m Ratings and Thermal Characteristics ( TA=25oC unless otherwise noted) PARAME TER Drain-Source Voltage Gate-Source Voltage Continuous Drain .


Pan Jit International PJA3414

Current Pulsed Drain Current Power Diss ipation Ta=25oC Derate above 25oC Ope rating Junction and Storage Temperature Range Typical Thermal resistance - Ju nction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 20 + 12 5.2 20.8 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W March 10,2014 -REV.00 Page 1 PPJA3414 Electrical Ch aracteristics (TA=2.


Pan Jit International PJA3414

5oC unless otherwise noted) PARAMETER S tatic Drain-Source Breakdown Voltage Ga te Threshold Voltage Drain-Source On-St ate Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dyn amic Total Gate Charge Gate-Source Char ge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Cap acitance Switching Turn-On Delay Time T urn-On Rise Time T.

Part

PJA3414

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 5.2A Features  RDS(ON) , VGS@4.5V, ID@5. 2A<36mΩ  RDS(ON) , VGS@2.5V, ID@3. 2A<52mΩ  RDS(ON) , VGS@1.8V, ID@1. 5A<92mΩ  Advanced Trench Process T echnology  Specially Designed for Sw itch Load, PWM Application, etc.  Le ad free in compliance with EU RoHS 2011 /65/EU directive.  Green molding co.
Manufacture

Pan Jit International

Datasheet
Download PJA3414 Datasheet




 PJA3414
PPJA3414
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V
Current
5.2A
Features
RDS(ON) , VGS@4.5V, ID@5.2A<36m
RDS(ON) , VGS@2.5V, ID@3.2A<52m
RDS(ON) , VGS@1.8V, ID@1.5A<92m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A14
SOT-23
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+12
5.2
20.8
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1




 PJA3414
PPJA3414
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=5.2A
VGS=2.5V, ID=3.2A
VGS=1.8V, ID=1.5A
VDS=20V, VGS=0V
VGS=+12V, VDS=0V
VDS=10V, ID=5.2A,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=5.2A,
VGS=4.5V,
RG=6(Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
20 -
-
0.5 0.77 1.2
- 29 36
V
V
- 39 52 m
- 58 92
- 0.01 1
uA
-
+10 +100
nA
- 4.1 -
- 1.1 -
- 0.7 -
- 396 -
- 54 -
- 40 -
nC
pF
- 14 -
10
ns
- 30 -
7
- - 1.5 A
-
0.75
1.2
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
March 10,2014-REV.00
Page 2




 PJA3414
PPJA3414
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
March 10,2014-REV.00
Fig.6 Body Diode Characteristics
Page 3



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