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Mode MOSFET. PJA3422 Datasheet

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Mode MOSFET. PJA3422 Datasheet






PJA3422 MOSFET. Datasheet pdf. Equivalent




PJA3422 MOSFET. Datasheet pdf. Equivalent





Part

PJA3422

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3422 30V N-Channel Enhancement Mode MOSFET– ESD Protected Voltage 30 V Current 4.2A SOT-23 Features  RDS(ON) , VGS@10V, ID@4.2A<42mΩ  R DS(ON) , VGS@4.5V, ID@3.5A<48mΩ  R DS(ON) , VGS@2.5V, ID@2.8A<55mΩ  A dvanced Trench Process Technology  S pecially Designed for Switch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in compliance with EU .
Manufacture

Pan Jit International

Datasheet
Download PJA3422 Datasheet


Pan Jit International PJA3422

PJA3422; RoHS 2011/65/EU directive.  Green mol ding compound as per IEC61249 Std. (Hal ogen Free) Mechanical Data  Case: S OT-23 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Appro x. Weight: 0.0003 ounces, 0.0084 grams  Marking: A22 Unit: inch(mm) Maxim um Ratings and Thermal Characterist ics o (TA=25 C unless otherwise not ed) PARAMETER Drain-Source.


Pan Jit International PJA3422

Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Powe r Dissipation Ta=25oC Derate above 25o C Operating Junction and Storage Tempe rature Range Typical Thermal resistanc e - Junction to Ambient (Note 3) SYMBO L VDS VGS ID IDM PD TJ,TSTG RθJA LIMI T 30 +12 4.2 16.8 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W May 21, 2015-REV.00 Page 1.


Pan Jit International PJA3422

PPJA3422 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdow n Voltage Gate Threshold Voltage Drain- Source On-State Resistance Zero Gate Vo ltage Drain Current Gate-Source Leakage Current Dynamic(Note 5 ) Total Gate Ch arge Gate-Source Charge Gate-Drain Char ge Input Capacitance Output Capacitance Reverse Transfer .

Part

PJA3422

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3422 30V N-Channel Enhancement Mode MOSFET– ESD Protected Voltage 30 V Current 4.2A SOT-23 Features  RDS(ON) , VGS@10V, ID@4.2A<42mΩ  R DS(ON) , VGS@4.5V, ID@3.5A<48mΩ  R DS(ON) , VGS@2.5V, ID@2.8A<55mΩ  A dvanced Trench Process Technology  S pecially Designed for Switch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in compliance with EU .
Manufacture

Pan Jit International

Datasheet
Download PJA3422 Datasheet




 PJA3422
PPJA3422
30V N-Channel Enhancement Mode MOSFETESD Protected
Voltage
30 V
Current
4.2A
SOT-23
Features
RDS(ON) , VGS@10V, ID@4.2A<42m
RDS(ON) , VGS@4.5V, ID@3.5A<48m
RDS(ON) , VGS@2.5V, ID@2.8A<55m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A22
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+12
4.2
16.8
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
May 21,2015-REV.00
Page 1




 PJA3422
PPJA3422
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic(Note 5 )
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=4.2A
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=2.8A
VDS=30V, VGS=0V
o
TJ =55 C
VGS=+12V, VDS=0V
VDS=15V, ID=4.2A,
VGS=4.5V (Note 1,2)
VDS=15V, VGS=0V,
f=1.0MHZ
VDD=15V, ID=1A,
VGS=10V,
RG=3Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
30 - - V
0.5 0.8 1.3
V
- 32 42
- 35 48 mΩ
- 44 55
- -1
uA
- -5
- - +10 uA
- 5.1 -
- 0.8 -
- 1.4 -
- 421 -
- 43 -
- 35 -
- 2.8 -
- 22 -
- 21 -
- 16 -
nC
pF
ns
- - 1.5 A
- 0.77 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
5. Guaranteed by design, not subject to production testing.
May 21,2015-REV.00
Page 2




 PJA3422
PPJA3422
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
May 21,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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