DatasheetsPDF.com

Mode MOSFET. PJA3448 Datasheet

DatasheetsPDF.com

Mode MOSFET. PJA3448 Datasheet






PJA3448 MOSFET. Datasheet pdf. Equivalent




PJA3448 MOSFET. Datasheet pdf. Equivalent





Part

PJA3448

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3448 40V N-Channel Enhancement Mode MOSFET Voltage 40 V Current 3.3A Features  RDS(ON) , VGS@10V, ID@3.3 A<71mΩ  RDS(ON) , VGS@4.5V, ID@2.2 A<96mΩ  Advanced Trench Process Te chnology  Specially Designed for swi tch Load, PWM applications, and solid-s tate relays relay  Lead free in comp liance with EU RoHS 2011/65/EU directiv e  Green molding compound as pe.
Manufacture

Pan Jit International

Datasheet
Download PJA3448 Datasheet


Pan Jit International PJA3448

PJA3448; r IEC61249 Std. (Halogen Free) Mechanica l Data  Case: SOT-23 Package  Te rminals : Solderable per MIL-STD-750, M ethod 2026  Approx. Weight: 0.0003 o unces, 0.0084 grams  Marking: A48 S OT-23 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA= 25 C unless otherwise noted) PARAME TER Drain-Source Voltage Gate-Source V oltage Continuous Drain Cu.


Pan Jit International PJA3448

rrent Pulsed Drain Current (Note 4) Powe r Dissipation Ta=25oC Derate above 25o C Operating Junction and Storage Tempe rature Range Typical Thermal resistanc e - Junction to Ambient (Note 3) SYMBO L VDS VGS ID IDM PD TJ,TSTG RθJA LIMI T 40 +20 3.3 13.2 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W April 2 8,2015-REV.00 Page 1 PPJA3448 Electr ical Characteristi.


Pan Jit International PJA3448

cs o (TA=25 C unless otherwise noted ) PARAMETER Static Drain-Source Breakd own Voltage Gate Threshold Voltage Drai n-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leaka ge Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Ch arge Input Capacitance Output Capacitan ce Reverse Transfer Capacitance Turn-On Delay Time Turn-O.

Part

PJA3448

Description

N-Channel Enhancement Mode MOSFET



Feature


PPJA3448 40V N-Channel Enhancement Mode MOSFET Voltage 40 V Current 3.3A Features  RDS(ON) , VGS@10V, ID@3.3 A<71mΩ  RDS(ON) , VGS@4.5V, ID@2.2 A<96mΩ  Advanced Trench Process Te chnology  Specially Designed for swi tch Load, PWM applications, and solid-s tate relays relay  Lead free in comp liance with EU RoHS 2011/65/EU directiv e  Green molding compound as pe.
Manufacture

Pan Jit International

Datasheet
Download PJA3448 Datasheet




 PJA3448
PPJA3448
40V N-Channel Enhancement Mode MOSFET
Voltage
40 V
Current
3.3A
Features
RDS(ON) , VGS@10V, ID@3.3A<71m
RDS(ON) , VGS@4.5V, ID@2.2A<96m
Advanced Trench Process Technology
Specially Designed for switch Load, PWM applications,
and solid-state relays relay
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A48
SOT-23
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
40
+20
3.3
13.2
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
April 28,2015-REV.00
Page 1




 PJA3448
PPJA3448
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=10V, ID=3.3A
VGS=4.5V, ID=2.2A
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
VDS=20V, ID=3.3A,
VGS=10V (Note 1,2)
VDS=20V, VGS=0V,
f=1.0MHZ
VDD=20V, ID=3.3A,
VGS=10V,
RG=1Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
MIN. TYP. MAX. UNITS
40 - - V
1.0 1.3 2.1
V
- 52 71
mΩ
- 70 96
- - 1 uA
- - +100 nA
- 6.1 -
- 0.9 -
- 1.2 -
- 241 -
- 28 -
- 24 -
- 3.3 -
- 28 -
- 13 -
- 8.7 -
nC
pF
ns
- - 1.0 A
- 0.8 1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
April 28,2015-REV.00
Page 2




 PJA3448
PPJA3448
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
April 28,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



Recommended third-party PJA3448 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)