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Mode MOSFET. PJA3449 Datasheet

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Mode MOSFET. PJA3449 Datasheet






PJA3449 MOSFET. Datasheet pdf. Equivalent




PJA3449 MOSFET. Datasheet pdf. Equivalent





Part

PJA3449

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3449 40V P-Channel Enhancement Mode MOSFET Voltage -40 V Current -2.2A Features  RDS(ON) , VGS@-10V, ID@- 2.2A<160mΩ  RDS(ON) , VGS@-4.5V, I D@-1.5A<230mΩ  Advanced Trench Pro cess Technology  Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Ha.
Manufacture

Pan Jit International

Datasheet
Download PJA3449 Datasheet


Pan Jit International PJA3449

PJA3449; logen Free) Mechanical Data  Case : SOT-23 Package  Terminals : Solderab le per MIL-STD-750, Method 2026  App rox. Weight : 0.0003 ounces, 0.0084 gra ms  Marking : A49 SOT-23 Unit: inc h(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless ot herwise noted) PARAMETER Drain-Sourc e Voltage Gate-Source Voltage Continuou s Drain Current Pulsed Dra.


Pan Jit International PJA3449

in Current (Note 4) Power Dissipation T a=25oC Derate above 25oC Operating Jun ction and Storage Temperature Range Ty pical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -40 +20 -2.2 - 8.8 1.25 10 -55~150 100 UNITS V V A A W mW/ oC oC oC/W April 28,2015-REV.00 Page 1 PPJA3449 Electrical Characte ristics o (TA=25 C.


Pan Jit International PJA3449

unless otherwise noted) PARAMETER S tatic Drain-Source Breakdown Voltage Ga te Threshold Voltage Drain-Source On-St ate Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dyn amic (Note 5) Total Gate Charge Gate-So urce Charge Gate-Drain Charge Input Cap acitance Output Capacitance Reverse Tra nsfer Capacitance Turn-On Delay Time Tu rn-On Rise Time Tu.

Part

PJA3449

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3449 40V P-Channel Enhancement Mode MOSFET Voltage -40 V Current -2.2A Features  RDS(ON) , VGS@-10V, ID@- 2.2A<160mΩ  RDS(ON) , VGS@-4.5V, I D@-1.5A<230mΩ  Advanced Trench Pro cess Technology  Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Ha.
Manufacture

Pan Jit International

Datasheet
Download PJA3449 Datasheet




 PJA3449
PPJA3449
40V P-Channel Enhancement Mode MOSFET
Voltage
-40 V Current
-2.2A
Features
RDS(ON) , VGS@-10V, ID@-2.2A<160m
RDS(ON) , VGS@-4.5V, ID@-1.5A<230m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
Marking : A49
SOT-23
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-40
+20
-2.2
-8.8
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
April 28,2015-REV.00
Page 1




 PJA3449
PPJA3449
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-2.2A
VGS=-4.5V, ID=-1.5A
VDS=-40V, VGS=0V
VGS=+20V, VDS=0V
VDS=-20V, ID=-2.2A,
VGS=-10V (Note 1,2)
VDS=-20V, VGS=0V,
f=1.0MHZ
VDD=-20V, ID=-2.2A,
VGS=-10V,
RG=1Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
MIN. TYP. MAX. UNITS
-40 -
-
-1.0 -1.78 -2.1
- 131 160
- 177 230
V
V
mΩ
-
-0.01
-1
uA
- +10 +100 nA
- 7.3 -
- 1.3 -
- 1.5 -
- 299 -
- 29 -
- 25 -
- 3.4 -
- 26 -
- 43 -
- 28 -
nC
pF
ns
- - -1.0 A
- -0.85 -1.2 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
April 28,2015-REV.00
Page 2




 PJA3449
PPJA3449
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
April 28,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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