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Mode MOSFET. PJA3461 Datasheet

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Mode MOSFET. PJA3461 Datasheet






PJA3461 MOSFET. Datasheet pdf. Equivalent




PJA3461 MOSFET. Datasheet pdf. Equivalent





Part

PJA3461

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3461 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -1.9A Features  RDS(ON) , VGS@-10V, ID@-1 .9A<190mΩ  RDS(ON) , VGS@-4.5V, ID @-1.5A<240mΩ  Advanced Trench Proc ess Technology  Specially Designed f or Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Ha.
Manufacture

Pan Jit International

Datasheet
Download PJA3461 Datasheet


Pan Jit International PJA3461

PJA3461; logen Free) Mechanical Data  Case: SO T-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Appro x. Weight: 0.0003 ounces, 0.0084 grams  Marking: A61 SOT-23 Unit : inch(m m Maximum Ratings and Thermal Char acteristics o (TA=25 C unless otherw ise noted) PARAMETER Drain-Source Vo ltage Gate-Source Voltage Continuous D rain Current TA=25oC TA=7.


Pan Jit International PJA3461

0oC Pulsed Drain Current (Note 1) Power Dissipation TA=25oC TA=70oC Single P ulse Avalanche Energy (Note 5) Operati ng Junction and Storage Temperature Ran ge Typical Thermal resistance - Juncti on to Ambient (Note 6) SYMBOL VDS VGS ID IDM PD EAS TJ,TSTG RθJA LIMIT -60 +20 -1.9 -1.5 -7.6 1.25 0.8 32 -55~150 100 UNITS V V A A W mJ oC oC/W August 3,2015-REV.00 Pag.


Pan Jit International PJA3461

e 1 PPJA3461 Electrical Characteristi cs o (TA=25 C unless otherwise note d) PARAMETER Static Drain-Source Break down Voltage Gate Threshold Voltage Dra in-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leak age Current Dynamic (Note 7) Total Gate Charge Gate-Source Charge Gate-Drain C harge Input Capacitance Output Capacita nce Reverse Transf.

Part

PJA3461

Description

P-Channel Enhancement Mode MOSFET



Feature


PPJA3461 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -1.9A Features  RDS(ON) , VGS@-10V, ID@-1 .9A<190mΩ  RDS(ON) , VGS@-4.5V, ID @-1.5A<240mΩ  Advanced Trench Proc ess Technology  Specially Designed f or Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Ha.
Manufacture

Pan Jit International

Datasheet
Download PJA3461 Datasheet




 PJA3461
PPJA3461
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-1.9A
Features
RDS(ON) , VGS@-10V, ID@-1.9A<190m
RDS(ON) , VGS@-4.5V, ID@-1.5A<240m
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A61
SOT-23
Unit : inch(mm
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25oC
TA=70oC
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC
TA=70oC
Single Pulse Avalanche Energy (Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 6)
SYMBOL
VDS
VGS
ID
IDM
PD
EAS
TJ,TSTG
RθJA
LIMIT
-60
+20
-1.9
-1.5
-7.6
1.25
0.8
32
-55~150
100
UNITS
V
V
A
A
W
mJ
oC
oC/W
August 3,2015-REV.00
Page 1




 PJA3461
PPJA3461
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-1.9A
VGS=-4.5V, ID=-1.5A
VDS=-60V, VGS=0V
VGS=+20V, VDS=0V
VDS=-30V, ID=-1.9A,
VGS=-10V (Note 1,2)
VDS=-30V, VGS=0V,
f=1.0MHZ
VDD=-30V, ID=-1.0A,
VGS=-10V,
RG=6Ω (Note 1,2)
---
MIN. TYP. MAX. UNITS
-60 - - V
-1.0 -1.88 -2.5
V
- 140 190
mΩ
- 190 240
- - -1 uA
- - +100 nA
- 8.3 -
- 1.8 -
- 1.6 -
- 430 -
- 33 -
- 29 -
- 5.1 -
- 20 -
- 36 -
- 11 -
nC
pF
ns
- - -1.5 A
Diode Forward Voltage
VSD IS=-1.0A, VGS=0V
- -0.78 -1.0 V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. The maximum current rating is package limited.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
5. The test condition is L=1mH, IAS=8A, VDD=25V, VGS=10V
6. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch2 with 2oz.square pad of copper.
7. Guaranteed by design, not subject to production testing.
August 3,2015-REV.00
Page 2




 PJA3461
PPJA3461
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
August 3,2015-REV.00
Fig.6 Body Diode Characteristics
Page 3



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