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+ Thyristor. MTPT15016 Datasheet






MTPT15016 Thyristor. Datasheet pdf. Equivalent




MTPT15016 Thyristor. Datasheet pdf. Equivalent





Part

MTPT15016

Description

Three-Phase Bridge + Thyristor



Feature


SEMICONDUCTOR MTPT150 RRooHHSS Nell Hig h Power Products Three-Phase Bridge + Thyristor, 150A MTPT15008 Thru MTPT1501 6 13.5 20 M4 R2 G 108 93 22 22 +- 12 R ST 28 22 22 4- 6.2 6-M6 26 62 22 4 8 1 8.5 41 27 FEATURES UL recognition file number E320098 Three-phase bridge and a thyristor High surge current capa bility Low thermal resistance Compliant to RoHS Isolation.
Manufacture

nELL

Datasheet
Download MTPT15016 Datasheet


nELL MTPT15016

MTPT15016; voltage up to 2500V Applications lnvert er for AC or DC motor control Current s tablilzed power supply Switching power supply ADVANTAGE International standard package Epoxy meets UL 94 V-O flammabi lity rating Small volume, light weight Small thermal resistance Weight: 470g ( 16.6 ozs) All dimensions in millimeter s G R2 + - PRIMARY CHARACTERRISTICS IF(AV) 150A VR.


nELL MTPT15016

RM 800V to 1600V IFSM 1460A IR 20 µ A VFM/VTM 1.3V TJ max. 150ºC www. nellsemi.com Page 1 of 5 SEMICONDUCTO R MTPT150 RRooHHSS Maximum Ratings fo r Diodes Nell High Power Products MAJ OR RATINGS AND CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 08 MTPT150 12 UNIT 16 Maxim um repetitive peak reverse voltage Peak reverse non-repetiti.


nELL MTPT15016

ve voltage Output DC current three-phase full wave, Tc = 100°C VRRM/VRRM VRSM IO 800 900 1200 1300 150 1600 1700 V V A Peak forward surge current sing le sine-wave superimposed on rated load IFSM 1460 A Rating (non-repetitive , for t greater than 1 ms and less than 8.3 ms) for fusing Operating junction temperature range Storage temperature r ange Thermal Impeda.

Part

MTPT15016

Description

Three-Phase Bridge + Thyristor



Feature


SEMICONDUCTOR MTPT150 RRooHHSS Nell Hig h Power Products Three-Phase Bridge + Thyristor, 150A MTPT15008 Thru MTPT1501 6 13.5 20 M4 R2 G 108 93 22 22 +- 12 R ST 28 22 22 4- 6.2 6-M6 26 62 22 4 8 1 8.5 41 27 FEATURES UL recognition file number E320098 Three-phase bridge and a thyristor High surge current capa bility Low thermal resistance Compliant to RoHS Isolation.
Manufacture

nELL

Datasheet
Download MTPT15016 Datasheet




 MTPT15016
SEMICONDUCTOR
MTPT150 RRooHHSS
Nell High Power Products
Three-Phase Bridge + Thyristor, 150A
MTPT15008 Thru MTPT15016
13.5 20
M4
R2
G
108
93
22 22
+-
12
R ST
28 22 22
4- 6.2
6-M6
FEATURES
UL recognition file number E320098
Three-phase bridge and a thyristor
High surge current capability
Low thermal resistance
Compliant to RoHS
Isolation voltage up to 2500V
Applications
lnverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
ADVANTAGE
International standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 470g (16.6 ozs)
All dimensions in millimeters
G R2
+
-
PRIMARY CHARACTERRISTICS
IF(AV)
150A
VRRM
800V to 1600V
IFSM
1460A
IR 20 µA
VFM/VTM
1.3V
TJ max.
150ºC
www.nellsemi.com
Page 1 of 5




 MTPT15016
SEMICONDUCTOR
MTPT150 RRooHHSS
Maximum Ratings for Diodes
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
08
MTPT150
12
UNIT
16
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Output DC current three-phase full wave, Tc = 100°C
VRRM/VRRM
VRSM
IO
800
900
1200
1300
150
1600
1700
V
V
A
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
1460
A
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
Operating junction temperature range
Storage temperature range
Thermal Impedance, junction to case
Thermal Impedance, case to heatsink
I2t
TJ
TSTG
RthJC
RthCS
10660
-40 to 150
-40 to 125
0.14
0.07
A2s
ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
TEST
CONDITIONS
IF = 150A
TA = 25°C
TA = 150°C
SYMBOL
VF
IR
08
Maximum Ratings for Thyristor
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
at case temperature
IT(AV) 180° conduction, half sine wave ,50Hz
Maximum peak, one-cycle, on-state ITSM t = 10 ms
non-repetitive surge current
t = 8.3 ms No voltage
t = 10 ms reapplied
Maximum I2t for fusing
t = 8.3 ms
I 2t
Sine half wave,
initial TJ =
TJ maximum
t = 10 ms 100%VRRM
t = 8.3 ms reapplied
Maximum I2t for fusing
I2t t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
VTM ITM = 150A , TJ = 25 °C, 180° conduction
IH Anode supply = 12 V initial IT = 30 A, TJ = 25 °C
IL
Anode supply = 12 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 °C
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical tum-off time
SYMBOL
td
tr
TEST CONDITIONS
TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs
Vd = 0.67 % VDRM
tq ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum,
VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω
www.nellsemi.com
Page 2 of 5
MTPT150
12
1.3
20
10
UNIT
16
V
µA
mA
VALUES
150
85
1460
1529
10.7
9.7
7.5
6.8
107
1.3
200
400
UNITS
A
°C
A
kA2s
kA2s
V
mA
VALUES
1
2
50 to 150
UNITS
μs




 MTPT15016
SEMICONDUCTOR
MTPT150 RRooHHSS
Nell High Power Products
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
IRRM,
IDRM
VISO
dV/dt
TEST CONDITIONS
TJ = 125 °C
50 Hz, circuit to base,
all terminals shorted, 25 ºC ,60s
TJ = TJ maximum,
exponential to 67 % rated VDRM
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
PGM
PG(AV)
IGM
- VGT
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
VGT
TJ = 25 °C
I GT
Anode supply = 12 V,
resistive load; Ra = 1 Ω
VGD
I GD
dI/dt
TJ = TJ maximum, 67% VDRM applied
TJ = 25ºC ,IGM = 1.5A ,tr 0.5 µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
junction operating and storage
temperature range
TJ, Tstg
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
RthJC
RthCS
DC operation
Mounting surface, smooth , flat and greased
Mounting
to heatsink, M6
torque ± 10 % to terminal, M6/M4
A mounting compound is recommended and the
torque should be rechecked after a period of
about 3 hours to allow for the
spread of the compound.
Approximate weight
VALUES
30
3000
500
UNITS
mA
V
Vs
VALUES
10
3
3
10
3
100
0.25
10
200
UNITS
W
A
V
mA
V
mA
As
VALUES
- 40 to 125
0.21
0.09
5
5/2
470
16.6
UNITS
°C
°C/W
N.m
g
oz.
Device code MTPT 150 16
1 23
1 - Module type : “MTPT” for 3Ø Bridge + Thyristor
2 - IF(AV) rating : "150" for 200 A
3 - Voltage code : code x 100 = VRRM
www.nellsemi.com
Page 3 of 5



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