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NK60TP16 Thyristor. Datasheet pdf. Equivalent




NK60TP16 Thyristor. Datasheet pdf. Equivalent





Part

NK60TP16

Description

Three-Phase Bridge + Thyristor



Feature


SEMICONDUCTOR NK60TP Series RRooHHSS Ne ll High Power Products Three-Phase Brid ge + Thyristor, 60A ( Low Profile Packa ge ) FEATURES Three-phase bridge and a thyristor High surge current capabilit y Planar thyristor chip Heat transfer a nd isolation through direct copper bond ed aluminium oxide ceramic (DBC) Low th ermal resistance Compliant to RoHS lsol ation voltage up t.
Manufacture

nELL

Datasheet
Download NK60TP16 Datasheet


nELL NK60TP16

NK60TP16; o 2500V Compact package, one screw mount ing Applications lnverter for AC or DC motor control Soft starters Switching p ower supply Light control Temperature c ontrol ADVANTAGE lnternational standard package Epoxy meets UL 94 V-O flammabi lity rating Small volume, light weight Small thermal resistance Weight: 30g (1 .06 oz.) 1,2 8,9 13,14 21 19 17 15, 1 6 27, 28 PRIMARY.


nELL NK60TP16

CHARACTERRISTICS IF(AV) 60A VRRM 12 00V to 1600V IFSM 1000A IR 10 µA V FM/VTM 1.45V / 1.6V TJ max. 150ºC Maximum Ratings for Diodes MAJOR RATIN GS AND CHARACTERISTICS (TC = 25°C unle ss otherwise noted) PARAMETER SYMBOL NK60TP 12 16 Maximum repetitive peak reverse voltage Peak reverse non-repet itive voltage Output DC current three-p hase full wave, Tc = .


nELL NK60TP16

80°C VRRM/VRRM VRSM IO 1200 1600 13 00 1700 60 Peak forward surge curren t single sine-wave superimposed on rate d load IFSM 1000 Rating (non-repetit ive, for t greater than 1 ms and less t han 8.3 ms) for fusing Operating juncti on temperature range Storage temperatur e range I2t TJ TSTG 5000 -40 to 150 - 40 to 125 UNIT V V A A A2s ºC ºC ww w.nellsemi.com Page .

Part

NK60TP16

Description

Three-Phase Bridge + Thyristor



Feature


SEMICONDUCTOR NK60TP Series RRooHHSS Ne ll High Power Products Three-Phase Brid ge + Thyristor, 60A ( Low Profile Packa ge ) FEATURES Three-phase bridge and a thyristor High surge current capabilit y Planar thyristor chip Heat transfer a nd isolation through direct copper bond ed aluminium oxide ceramic (DBC) Low th ermal resistance Compliant to RoHS lsol ation voltage up t.
Manufacture

nELL

Datasheet
Download NK60TP16 Datasheet




 NK60TP16
SEMICONDUCTOR
NK60TP Series RRooHHSS
Nell High Power Products
Three-Phase Bridge + Thyristor, 60A
( Low Profile Package )
FEATURES
Three-phase bridge and a thyristor
High surge current capability
Planar thyristor chip
Heat transfer and isolation through direct
copper bonded aluminium oxide ceramic (DBC)
Low thermal resistance
Compliant to RoHS
lsolation voltage up to 2500V
Compact package, one screw mounting
Applications
lnverter for AC or DC motor control
Soft starters
Switching power supply
Light control
Temperature control
ADVANTAGE
lnternational standard package
Epoxy meets UL 94 V-O flammability rating
Small volume, light weight
Small thermal resistance
Weight: 30g (1.06 oz.)
1,2 8,9 13,14
21
19 17
15, 16
27, 28
PRIMARY CHARACTERRISTICS
IF(AV)
60A
VRRM
1200V to 1600V
IFSM
1000A
IR 10 µA
VFM/VTM
1.45V / 1.6V
TJ max.
150ºC
Maximum Ratings for Diodes
MAJOR RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise noted)
PARAMETER
SYMBOL
NK60TP
12
16
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
Output DC current three-phase full wave, Tc = 80°C
VRRM/VRRM
VRSM
IO
1200
1600
1300
1700
60
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
1000
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
Operating junction temperature range
Storage temperature range
I2t
TJ
TSTG
5000
-40 to 150
-40 to 125
UNIT
V
V
A
A
A2s
ºC
ºC
www.nellsemi.com
Page 1 of 5




 NK60TP16
SEMICONDUCTOR
NK60TP Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
Maximum instantaneous forward drop per diode
Maximum reverse DC current at rated DC blocking
voltage per diod
IF = 75A
TC = 25°C
TC = 150°C
VF
IR
NK60TP
12 16
1.45
10
6
UNIT
V
µA
mA
Maximum Ratings fo Thyristor
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum peak, one-cycle, on-state
non-reptitive surge current
Maximum l2t for fusing
Maximum l2t for fusing
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
SYMBOL
TEST CONDITIONS
IT(AV) 180° conduction, half sine wave, 50Hz
ITSM
I2t
I2t
VTM
IH
IL
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
Sine half wave,
initial TJ = TJ maximum
t = 10ms
t = 8.3ms
100%VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
lTM = 200A, TJ = 25°C, 180° conduction
Anode supply = 6V, resistive load, TJ = 25°C
VALUES UNIT
60 A
80 ºC
1500
1570
A
11250
10230
7870
A2s
7160
112.5 kA2s
1.8 V
150
mA
250
SWITCHING
PARAMETER
Typical turn-off time
SYMBOL
tq
TEST CONDITIONS
ITM = 300A, dI/dt = 15 A/µs, TJ = TJ maximum
VR = 50V, dV/dt = 20 V/dt, gate 0V, 100Ω
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
lRRM
lDRM
VISO
dV/dt
TEST CONDITIONS
TJ = 125°C
60 Hz, circuit to base,
all terminals shorted, 25°C, 60s
TJ = TJ maximum,
exponential to 67% VDRM
VALUES
50 to 120
UNIT
µs
VALUES
20
2500
1000
UNIT
mA
V
Vs
www.nellsemi.com
Page 2 of 5




 NK60TP16
SEMICONDUCTOR
NK60TP Series RRooHHSS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive
gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turmed-on current
SYMBOL
TEST CONDITIONS
PGM tp ≤ 5ms, TJ = TJ maximum
PG(AV) f = 50Hz, TJ = TJ maximum
lGM
-VGT
tp ≤ 5ms, TJ = TJ maximum
VGT
lGT
TJ = 25°C
Anode supply = 6V,
resistive load; Ra = 1Ω
VGD
lGD
TJ = TJ maximum, 67% VDRM applied
dl/dt TJ = 25°C, lGM = 1.5A, tr ≤ 0.5 µs
VALUES
10
5
3
10
2
100
0.25
5
150
UNIT
W
A
V
mA
V
mA
A/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature
range
TJ
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Tstg
Rth(j-c) DC operation
Typical thermal resistance,
case to heatsink per module
RthCS Mounting surface, smooth, flat and greased
Mounting torque, ±10%
module to heatsink, M4
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
Approximate weight
VALUES
-40 to 150
-40 to 125
1.0
0.30
2
30
1.06
UNITS
°C
°C/W
N.m
g
oz.
Ordering Information Tabel
www.nellsemi.com
Device code NK 60 TP 12
1 2 34
1 - Nell’s Low Profile Module
2 - Current rating : I(TAV) / IO
3 - Circuit configuration type : “TP” for 3-phase bridge + thyristor
4 - Voltage code : code x 100 = VRRM
Page 3 of 5



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