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Diode Module. NKFD200-40 Datasheet

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Diode Module. NKFD200-40 Datasheet






NKFD200-40 Module. Datasheet pdf. Equivalent




NKFD200-40 Module. Datasheet pdf. Equivalent





Part

NKFD200-40

Description

Ultrafast Soft Recovery Diode Module



Feature


SEMICONDUCTOR NKFD200-40 Series RRooHHS S Nell High Power Products FRED Ultraf ast Soft Recovery Diode Module, 200 A FEATURES Very low Qrr and trr Lead (Pb) -free Designed and qualified for indust rial level Reduced RFI and EMI Reduced snubbing DESCRIPTION FRED diodes are op timized to reduce losses and EMI/RFI in high frequency power conditioning syst ems. An extensive .
Manufacture

nELL

Datasheet
Download NKFD200-40 Datasheet


nELL NKFD200-40

NKFD200-40; characterization of the recovery behavio r for different values of current, temp erature and dl/dt simplifies the calcul ations of losses in the operating condi tions. The softness of the recovery eli minates the need for a snubber in most applications. TYPICAL APPLICATIONS Powe r converters Motor drives Welders Switc hing power supplies TO-244 (non-insula ted) TO-244 (insu.


nELL NKFD200-40

lated) Lug Lug terminal terminal anode 1 anode 2 Lug terminal common cathode Lug terminal anode 1 Lug terminal ano de 2 Base common cathode *Add suffix R for common anode PRODUCT SUMMARY IF (AV) 200A VR 400V IF(DC) at TC 160A at 100 °C ABSOLUTE MAXIMUM RATINGS P ARAMETER Cathode to anode voltage Avera ge forward current DC forward current S ingle pulse forward.


nELL NKFD200-40

current Non-repetitive avalanche energy Maximum power dissipation Operating ju nction and storage temperature range S YMBOL VR IF(AV) IF(DC) lFSM TEST CONDI TIONS TC =25°C, per leg per device TC =120°C per leg TC =100°C Limited by j unction temperature, per leg EAS PD TJ , TStg L = 100 μΗ, duty cycle limite d by maximum TJ TC =25°C TC =100°C M AX. 400 315 200 100 160 1.

Part

NKFD200-40

Description

Ultrafast Soft Recovery Diode Module



Feature


SEMICONDUCTOR NKFD200-40 Series RRooHHS S Nell High Power Products FRED Ultraf ast Soft Recovery Diode Module, 200 A FEATURES Very low Qrr and trr Lead (Pb) -free Designed and qualified for indust rial level Reduced RFI and EMI Reduced snubbing DESCRIPTION FRED diodes are op timized to reduce losses and EMI/RFI in high frequency power conditioning syst ems. An extensive .
Manufacture

nELL

Datasheet
Download NKFD200-40 Datasheet




 NKFD200-40
SEMICONDUCTOR
NKFD200-40 Series RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode Module, 200 A
FEATURES
Very low Qrr and trr
Lead (Pb)-free
Designed and qualified for industrial level
Reduced RFI and EMI
Reduced snubbing
DESCRIPTION
FRED diodes are optimized to reduce
losses and EMI/RFI in high frequency
power conditioning systems. An
extensive characterization of the
recovery behavior for different values
of current, temperature and dl/dt
simplifies the calculations of losses in
the operating conditions. The softness
of the recovery eliminates the need for
a snubber in most applications.
TYPICAL APPLICATIONS
Power converters
Motor drives
Welders
Switching power supplies
TO-244 (non-insulated)
TO-244 (insulated)
Lug Lug
terminal terminal
anode 1 anode 2
Lug terminal
common cathode
Lug
terminal
anode 1
Lug
terminal
anode 2
Base
common cathode
*Add suffix R for common anode
PRODUCT SUMMARY
IF(AV)
200A
VR 400V
IF(DC) at TC
160A at 100 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Average forward current
DC forward current
Single pulse forward current
Non-repetitive avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF(AV)
IF(DC)
lFSM
TEST CONDITIONS
TC =25°C, per leg
per device
TC =120°C
per leg
TC =100°C
Limited by junction temperature,
per leg
EAS
PD
TJ, TStg
L = 100 μΗ, duty cycle limited by
maximum TJ
TC =25°C
TC =100°C
MAX.
400
315
200
100
160
1400
UNIT
V
A
1.4
394
192
- 55 to 150
mJ
W
°C
www.nellsemi.com
Page 1 of 7




 NKFD200-40
SEMICONDUCTOR
NKFD200-40 Series RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR IR = 100 µA
400
IF = 100 A
Maximum forward voltage VFM IF = 200 A
IF = 100 A, TJ = 125 ºC
-
-
-
Maximum reverse leakage
current per leg
IRM
TJ = 125°C, VR = 400V
TJ = 25°C, VR = 400V
-
-
Junction capacitance
Series inductance
CT VR = 200V
LS From top of terminal hole to mounting plane
-
-
Maximum RMS insulation
voltage (for insulated type)
VINS
50Hz
-
TYP.
-
MAX.
-
UNIT
1.05
1.25
0.90
0.50
1.25
1.45
1.10
4.0
2.0 10
280
6.0
-
380
-
3000(1min)
3600(1s)
V
mA
µA
pF
nH
V
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
IF = 0.5A, IR = 1.0A, IRR = 0.25A
IF = 1.0A, dlF/dt=200A/μs, VR = 30V
trr
TJ = 25 ºC
- 60 70
- 50 -
- 77 120
TJ = 125 ºC
- 290 440
Peak recovery current
Reverse recovery charge
lRRM
Qrr
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
IF= 140A
dIF/dt = 200 A/µs
VR = 200 V
- 7.5 14
- 16 30
- 290 780
-
2300
3600
Peak rate of recovery
current
TJ = 25 ºC
dl(rec)M/dt
TJ = 125 ºC
- 320 -
- 270 -
UNIT
ns
A
nC
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
SYMBOL
TJ, Tstg
MIN.
-55
TYP.
-
MAX.
150
UNIT
ºC
Thermal resistance, junction to
case per leg
Thermal resistance, junction to
case per module
TO-244 (non-insulated)
TO-244 (insulated)
TO-244 (non-insulated)
TO-244 (insulated)
Typical thermal resistance, case to heatsink
Weight
TO-244 (non-insulated)
TO-244 (insulated)
RthJC
RthJC
RthCS
- - 0.19
- - 0.28
- - 0.095 ºC/W
- - 0.14
- 0.10 -
- 80 (2.82) -
- 95 (3.36) -
g (oz.)
Mounting torque (1)
Mounting torque center hole
Terminal torque
30 (3.4) - 40 (4.6)
12 (1.4)
-
18 (2.1)
lbf . in
(N . m)
30 (3.4) - 40 (4.6)
Vertical pull
2lever pull
- - 80
lbf . in
- - 35
Note
(1)Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf. in steps until desired or maximum torque limits are reached
www.nellsemi.com
Page 2 of 7




 NKFD200-40
SEMICONDUCTOR
Ordering Information Tabel
NKFD200-40 Series RRooHHSS
Nell High Power Products
Device code
NK F D 200 - 40 R
I
12 3 4
567
1 - Nell's power module
2 - F for Ultrafast soft recovery diode
3 - D for Dual Diodes, TO-244 Package
4 - Maximum average forward current, A
5 - Voltage rating (40 = 400V)
6 - None for common cathode configuration
"R" for common anode configuration
7 - None for non-insulated type
"I" for insulated type
Fig.1 Maximum forward voltage drop vs.
lnstantaneous forward current (per leg)
1000
100
10
TJ=150°C
TJ=125°C
TJ=25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward voltage drop, VFM(V)
Fig.2 Typical reverse current vs.
reverse voltage (per leg)
10000
1000
100
TJ=150°C
TJ=125°C
10
TJ=25°C
1
0.1
100
200 300
Reverse voltage, VR (V)
400
Fig.3 Typical junction capacitance vs.
reverse voltage (per leg)
10000
1000
TJ=25°C
100
1
10 100
Reverse voltage, VR (V)
1000
www.nellsemi.com
Page 3 of 7
Fig.4 Maximum allowable case temperature vs.
DC forward current (per leg)
160
140
120
100
80
60
40
20
0
0
DC
100 200 300
DC forward current, lF(AV) (A)
400



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