JANSR2N7547T3 Datasheet PDF | International Rectifier





(PDF) JANSR2N7547T3 Datasheet

Part Number JANSR2N7547T3
Description RADIATION HARDENED POWER MOSFET
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download JANSR2N7547T3 Datasheet PDF

Features: PD-94343A RADIATION HARDENED POWER MOSF ET THRU-HOLE (TO-257AA) Product Summary IRHY597130CM JANSR2N7547T3 100V, P-CH ANNEL REF: MIL-PRF-19500/712 5 TECHNOL OGY ™ Part Number Radiation Level RDS (on) ID QPL Part Number IRHY597130CM 10 0K Rads (Si) 0.215Ω -12.5A JANSR2N754 7T3 IRHY593130CM 300K Rads (Si) 0.215 -12.5A JANSF2N7547T3 International R ectifier’s R5TM technology provides h igh performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combinati on of low RDS(on) and low gate charge r educes the power losses in switching ap plications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fa st switching, ease of paralleling and t emperature stability of electrical para meters. T0-257AA Features: n Single Ev ent Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge .

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JANSR2N7547T3 datasheet
PD-94343A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
IRHY597130CM
JANSR2N7547T3
100V, P-CHANNEL
REF: MIL-PRF-19500/712
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHY597130CM 100K Rads (Si) 0.215-12.5A JANSR2N7547T3
IRHY593130CM 300K Rads (Si) 0.215-12.5A JANSF2N7547T3
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750, Method
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-12.5
-8.0
A
-50
75 W
0.6 W/°C
±20 V
94 mJ
-12.5
A
7.5 mJ
-4.3 V/ns
-55 to 150
°C
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
11/15/12

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