DatasheetsPDF.com

IRHYB597Z30CM

Part Number	IRHYB597Z30CM
Manufacturer	International Rectifier
Description	RADIATION HARDENED POWER MOSFET
Published	Mar 7, 2016
Detailed Description	PD - 95819 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ...
Datasheet	IRHYB597Z30CM PDF File

Overview

PD - 95819 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) IRHYB597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level IRHYB597Z30CM 100K Rads (Si) IRHYB593Z30CM 300K Rads (Si) RDS(on) 0.
048Ω 0.
048Ω ID -20A* -20A* International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established adva...

Similar Datasheet

IRHYB597Z30CM RADIATION HARDENED POWER MOSFET - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)