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IRG8P08N120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR
Description
IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar
Transistor
with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 5A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(O...
International Rectifier
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IRG8P08N120KDPbF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
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