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IRGP4266DPbF
INSULATED GATE BIPOLAR TRANSISTOR
Description
IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar
Transistor
with Ultrafast Soft Recovery Diode C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maxi...
International Rectifier
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IRGP4266DPbF
INSULATED GATE BIPOLAR TRANSISTOR
- International Rectifier
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