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BFP720ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Description
BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF
Transistor
Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee...
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BFP720ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
- Infineon
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