HIGH-LINEARITY AMPLIFIER. RFLA1010 Datasheet

RFLA1010 AMPLIFIER. Datasheet pdf. Equivalent

Part RFLA1010
Description HIGH-LINEARITY AMPLIFIER
Feature RFLA1010 Step Gain, Low Noise, HighLinearity Amplifier 1920MHz to 1980MHz RFLA1010 STEP GAIN, LOW .
Manufacture RF Micro Devices
Datasheet
Download RFLA1010 Datasheet




RFLA1010
RFLA1010
Step Gain, Low
Noise, High-
Linearity
Amplifier
1920MHz to
1980MHz
RFLA1010
STEP GAIN, LOW NOISE, HIGH-LINEARITY
AMPLIFIER 1920MHZ TO 1980MHZ
Package Style: MCM 68-Pin, 10mm x 10mm
Features
Frequency Range 1920MHz to
1980MHz
Full Internal 50Matched
Bypass Mode of LNA for High
Dynamic Range
Max Gain = 29dB
Noise Figure of 1.5dB Typical
High IIP3 = -10dBm
Single +3V Supply
Applications
3G, 4G Cellular Base Station
MIMO LNA
Remote Radio Head LNA
Active Antenna LNA
RF1in
RF2in
RF3in
RF4in
4 Path LNA
1920 to 1980MHz
LNA1
SAW Filter
LNA2
RF1out
RF2out
RF3out
RF4out
Functional Block Diagram
Product Description
RFMD's RFLA1010 is a four-path, low noise amplifier module with integrated RX
band filter. Each LNA can be bypassed to provide higher dynamic range. The
RFLA1010 has very low power consumption, with each LNA path drawing only
10mA from a 3V supply. It is packaged in a highly integrated 10mm x 10mm, multi-
ple-chip module (MCM) that is internally matched to 50.
DS111121
Ordering Information
RFLA1010SR
RFLA1010SQ
RFLA1010TR7
RFLA1010TTR13
RFLA1010PCK-410
7" Reel with 100 pieces
Sample Bag with 25 pieces
7" Reel with 500 pieces
13" Reel with 1500 pieces
1920MHz to 1980MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RFLA1010
RFLA1010
Absolute Maximum Ratings
Parameter
Supply Voltage
Control Voltage
DC Supply Current
Power Dissipation
Operating Temperature (TCASE)
Storage Temperature
Junction Temperature (TJ)
ESD Rating - Human Body Model (HBM)
Thermal Resistance
Moisture Sensitivity Level
Rating
+3.6
+3.6
50
0.15
-40 to +85
-40 to +150
90
2000
44.2
MSL3
Unit
VDC
VDC
mA
mW
°C
°C
°C
V
°C/W
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Specification
Min. Typ. Max.
High Gain Mode Data
Frequency Range
1920
1980
Gain
28
Noise Figure
1.55
Input P1dB for RX In-band Signal
-21.5
Input P1dB for TX Band Signal
-11
IIP3 for RX In-band Signal (2 Tone Test)
-9
Path to Path Isolation
-35
Current (Single LNA Path)
10.3
Input Return Loss
-15
Output Return Loss
-14.2
Mid Gain Mode Data - First LNA Bypass
Frequency Range
1920
1980
Gain
7
Noise Figure
8.5
Input P1dB for RX In-band Signal
2.3
Input P1dB for TX Band Signal
5
IIP3 for RX In-band Signal (2 Tone Test)
9
Current (Single LNA Path)
5
Input Return Loss
-11.6
Output Return Loss
Low Gain Mode Data - Both LNA Bypass
-9.9
Frequency Range
1920
1980
Gain
-13.5
Noise Figure
12.3
Input P1dB for RX In-band Signal
8
Input P1dB for TX Band Signal
5
IIP3 for RX In-band Signal (2 Tone Test)
23
Input Return Loss
-10.2
Output Return Loss
-10.2
Unit Condition
MHz
dB
dB
dBm
dBm
dBm
dB
mA
dB
dB
MHz
dB
dB
dBm
dBm
dBm
mA
dB
dB
MHz
dB
dB
dBm
dBm
dBm
dB
dB
Temp=25°C, VCC=3V, Standard Application Circuit
Temp=25°C, VCC=3V, Standard Application Circuit
Temp=25°C, VCC=3V, Standard Application Circuit
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111121







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