S6202
SiC Schottky Barrier Diode Bare Die
VR 650V IF 10A*1 QC 15nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lInner circuit
(C)
(A)
Data Sheet
(C) Cathode (A) Anode
lConstruction Silicon carbide epitaxial planer type Schottky diode
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
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