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SCS212AJ

Rohm

SiC Schottky Barrier Diode

Description
SCS212AJ SiC Schottky Barrier Diode VR 650V IF 12A QC 18nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline LPT(L) Data Sheet (1) (2) (3) (4) lInner circuit (1) (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging ...

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