1N6643US DIODES Datasheet

1N6643US Datasheet, PDF, Equivalent


Part Number

1N6643US

Description

SWITCHING DIODES

Manufacture

Compensated Deuices Incorporated

Total Page 2 Pages
Datasheet
Download 1N6643US Datasheet


1N6643US
• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: IFSM = 2.5A, half sine wave, Pw = 8.3ms
1N6638U & US
1N6642U & US
1N6643U & US
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
TYPES
V BR
@ IR
=100 µA
1N6638U & US
1N6642U & US
1N6643U & US
V (pk)
150
100
75
V RWM
V (pk)
125
75
50
V F1
IFM
=10 mA
(Pulsed)
V dc
0.8
1.0
1.0
V F2 @ I F2
(Pulsed)
V dc
mA
1.1 200
1.2 100
1.2 100
tfr
IF
=50 mA
ns
20
20
20
trr
IR = 10 mA
IF = 10 mA
IREC = 1 mA
ns
4.5
5.0
6.0
TYPES
1N6638U & US
1N6642U & US
1N6643U & US
I R1
VR
= 20 V
nA dc
35
25
50
I R2 I R3 I R4 C T1
@V R
= V RWM
µA dc
V R = 20 V V R = V RWM
TA = 150°C TA = 150°C
µA dc
µA dc
VR=
0V
pF
0.5 50
0.5 50
0.5 75
100 2.5
100 5.0
160 5.0
C T2
VR=
1.5V
pF
2.0
2.8
2.8
MILLIMETERS
DIM MIN MAX
D 1.78 2.16
F 0.48 0.71
G 4.19 4.95
S 0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
T50HE°RCM/WALmRaxEimSIuSmTAaNt LCE=:0(ROJEC):
THERMAL IMPEDANCE:
°C/W maximum
(ZOJX):
25
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com

1N6643US
IN6638U&US, IN6642U&US and IN6643U&US
1000
100
10
1
0.1
.2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
100
150ºC
10
100ºC
1
0.1
25ºC
.01
-65ºC
.001
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
NOTE :
All temperatures shown on graphs are
junction temperatures


Features • 1N6638US,1N6642US, 1N6643US AVAILABL E IN JAN, JANTX, JANTXV AND JANS PER MI L-PRF-19500/578 • 1N6638U,1N6642U, 1N 6643U AVAILABLE IN JAN, JANTX, JANTXV A ND JANS PER MIL-PRF-19500/578 • SWITC HING DIODES • NON-CAVITY GLASS PACKAG E • METALLURGICALLY BONDED 1N6638U & US 1N6642U & US 1N6643U & US MAXIMUM RATINGS Operating Temperature: -65°C t o +175°C Storage Temperature: -65°C t o +175°C Operating Current: 300 mA Der ating: 4.6 mA/°C Above TEC = + 110°C Surge Current: IFSM = 2.5A, half sine w ave, Pw = 8.3ms ELECTRICAL CHARACTERIS TICS @ 25°C, unless otherwise specifie d. V BR TYPES @ IR =100 µA V RWM V F1 IFM =10 mA (Pulsed) V (pk) 1N6638U & US 1N6642U & US 1N6643U & US 150 100 75 V (pk) 125 75 50 V dc 0.8 1.0 1.0 V dc 1 .1 1.2 1.2 (Pulsed) mA 200 100 100 V F2 @ I F2 tfr IF =50 mA ns 20 20 20 trr I R = 10 mA IF = 10 mA IREC = 1 mA ns 4.5 5.0 6.0 DIM D F G S MILLIMETERS MIN MAX 1.78 2.16 0.48 0.71 4.19 4.95 0.08M IN. INCHES MIN MAX 0.070 0.085 0.019 0.028 0.165 0.195 0.003MIN. FIGURE 1 DESI.
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