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HRU50N06K

N-Channel MOSFET

Description

HRD50N06K_HRU50N06K HRD50N06K / HRU50N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 11.5 mΩ (Typ.) @VGS=10V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ ...

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