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PYA28HC256

PYRAMID

STATIC CMOS RAM


Description
FEATURES Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times PYA28HC256 HIGH SPEED 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 10,000 Write Cycles - 100,000 Write Cycl...



PYRAMID

PYA28HC256

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