Dual N-Channel Enhancement Mode Field Effect Transistor
Description
Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2700
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
210 @ VGS=10V 75V 2.5A
250 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D1 D1 D2 D2
PDFN 5x6
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM ...
