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NPN TRANSISTOR. KTN2222AS Datasheet |
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
Complementary to the KTN2907S/2907AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25 )
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
60 75
30 40
56
600
350
150
V
V
V
mA
mW
Storage Temperature Range
Tstg
-55 150
Note : PC* : Package Mounted on 99.5% alumina 10 8 0.6mm.
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
Type Name
ZB
Lot No.
ZGType Name
Lot No.
MARK SPEC
TYPE
KTN2222S
KTN2222AS
MARK
ZB
ZG
1999. 5. 4
Revision No : 2
1/5
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KTN2222S/AS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector Cut-off Current
KTN2222AS
KTN2222S
KTN2222AS
ICEX
ICBO
VCE=60V, VEB(OFF)=3V
VCB=50V, IE=0
VCB=60V, IE=0
Emitter Cut-off Current
KTN2222AS
IEBO
VEB=3V, IC=0
Collector-Base
Breakdown Voltage
KTN2222S
KTN2222AS
V(BR)CBO IC=10 A, IE=0
Collector-Emitter
Breakdown Voltage
* KTN2222S
V(BR)CEO IE=10mA, IB=0
KTN2222AS
Emitter-Base
Breakdown Voltage
DC Current Gain
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
*
KTN2222S
KTN2222AS
V(BR)EBO IE=10 A, IC=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
hFE(5) IC=500mA, VCE=10V
Collector-Emitter
Saturation Voltage
KTN2222S
* KTN2222AS
KTN2222S
KTN2222AS
VCE(sat)1 IC=150mA, IB=15mA
VCE(sat)2 IC=500mA, IB=50mA
Base-Emitter
Saturation Voltage
KTN2222S
* KTN2222AS
KTN2222S
KTN2222AS
VBE(sat)1
VBE(sat)2
Transition Frequency
KTN2222S
KTN2222AS
fT
Collector Output Capacitance
Cob
Input Capacitance
KTN2222S
KTN2222AS
Cib
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
MIN. TYP. MAX. UNIT
- - 10 nA
- - 0.01
A
- - 0.01
- - 10 nA
60 -
-
V
75 -
-
30 -
-
40 - - V
5- -
6- -V
35 -
-
50 -
-
75 -
-
100 - 300
30 -
-
40 -
-
- - 0.4
- - 0.3
V
- - 1.6
- -1
- - 1.3
0.6 - 1.2
V
- - 2.6
- - 2.0
250 -
300 -
-
MHz
-
- - 8 pF
- - 30
pF
- - 25
1999. 5. 4
Revision No : 2
2/5
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KTN2222S/AS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Input Impedance
KTN2222AS
Voltage Feedback Ratio
KTN2222AS
Small-Singal Current Gain
KTN2222AS
Collector Output Admittance KTN2222AS
Collector-Base Time Constant KTN2222AS
Noise Figure
KTN2222AS
Switching Time
Delay Time
Rise Time
Storage Time
Fall Time
hie
hre
hfe
hoe
Cc rbb’
NF
td
tr
tstg
tf
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IE=20mA, VCB=20V, f=31.8MHz
IC=100 A, VCE=10V,
Rg=1k , f=1kHz
VCC=30V, VBE(OFF)=0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
MIN.
2
0.25
-
-
50
75
5
25
-
TYP. MAX. UNIT
-8
k
- 1.25
-8
x10-4
-4
- 300
- 375
- 35
- 200
- 150 pS
- - 4 dB
- - 10
- - 25
nS
- - 225
- - 60
1999. 5. 4
Revision No : 2
3/5
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