NPN TRANSISTOR. KTN2222AS Datasheet

KTN2222AS TRANSISTOR. Datasheet pdf. Equivalent

KTN2222AS Datasheet
Recommendation KTN2222AS Datasheet
Part KTN2222AS
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTN2222AS; SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakag.
Manufacture KEC
Datasheet
Download KTN2222AS Datasheet




KEC KTN2222AS
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.
Complementary to the KTN2907S/2907AS.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25 )
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
60 75
30 40
56
600
350
150
V
V
V
mA
mW
Storage Temperature Range
Tstg
-55 150
Note : PC* : Package Mounted on 99.5% alumina 10 8 0.6mm.
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
Type Name
ZB
Lot No.
ZGType Name
Lot No.
MARK SPEC
TYPE
KTN2222S
KTN2222AS
MARK
ZB
ZG
1999. 5. 4
Revision No : 2
1/5



KEC KTN2222AS
KTN2222S/AS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Collector Cut-off Current
KTN2222AS
KTN2222S
KTN2222AS
ICEX
ICBO
VCE=60V, VEB(OFF)=3V
VCB=50V, IE=0
VCB=60V, IE=0
Emitter Cut-off Current
KTN2222AS
IEBO
VEB=3V, IC=0
Collector-Base
Breakdown Voltage
KTN2222S
KTN2222AS
V(BR)CBO IC=10 A, IE=0
Collector-Emitter
Breakdown Voltage
* KTN2222S
V(BR)CEO IE=10mA, IB=0
KTN2222AS
Emitter-Base
Breakdown Voltage
DC Current Gain
KTN2222S
KTN2222AS
KTN2222S
KTN2222AS
*
KTN2222S
KTN2222AS
V(BR)EBO IE=10 A, IC=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
IC=0.1mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=150mA, VCE=10V
hFE(5) IC=500mA, VCE=10V
Collector-Emitter
Saturation Voltage
KTN2222S
* KTN2222AS
KTN2222S
KTN2222AS
VCE(sat)1 IC=150mA, IB=15mA
VCE(sat)2 IC=500mA, IB=50mA
Base-Emitter
Saturation Voltage
KTN2222S
* KTN2222AS
KTN2222S
KTN2222AS
VBE(sat)1
VBE(sat)2
Transition Frequency
KTN2222S
KTN2222AS
fT
Collector Output Capacitance
Cob
Input Capacitance
KTN2222S
KTN2222AS
Cib
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
MIN. TYP. MAX. UNIT
- - 10 nA
- - 0.01
A
- - 0.01
- - 10 nA
60 -
-
V
75 -
-
30 -
-
40 - - V
5- -
6- -V
35 -
-
50 -
-
75 -
-
100 - 300
30 -
-
40 -
-
- - 0.4
- - 0.3
V
- - 1.6
- -1
- - 1.3
0.6 - 1.2
V
- - 2.6
- - 2.0
250 -
300 -
-
MHz
-
- - 8 pF
- - 30
pF
- - 25
1999. 5. 4
Revision No : 2
2/5



KEC KTN2222AS
KTN2222S/AS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Input Impedance
KTN2222AS
Voltage Feedback Ratio
KTN2222AS
Small-Singal Current Gain
KTN2222AS
Collector Output Admittance KTN2222AS
Collector-Base Time Constant KTN2222AS
Noise Figure
KTN2222AS
Switching Time
Delay Time
Rise Time
Storage Time
Fall Time
hie
hre
hfe
hoe
Cc rbb’
NF
td
tr
tstg
tf
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IC=1mA, VCE=10V, f=1kHz
IC=10mA, VCE=10V, f=1kHz
IE=20mA, VCB=20V, f=31.8MHz
IC=100 A, VCE=10V,
Rg=1k , f=1kHz
VCC=30V, VBE(OFF)=0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
MIN.
2
0.25
-
-
50
75
5
25
-
TYP. MAX. UNIT
-8
k
- 1.25
-8
x10-4
-4
- 300
- 375
- 35
- 200
- 150 pS
- - 4 dB
- - 10
- - 25
nS
- - 225
- - 60
1999. 5. 4
Revision No : 2
3/5







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