Switching Diodes. 1SS133M Datasheet

1SS133M Datasheet PDF, Equivalent


Part Number

1SS133M

Description

Hermetically Sealed Glass Switching Diodes

Manufacture

Taiwan Semiconductor

Total Page 4 Pages
PDF Download
Download 1SS133M Datasheet


1SS133M Datasheet
Small Signal Product
1SS133M
Taiwan Semiconductor
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Working Inverse Voltage
WIV 90
Average Rectified Current
IO 150
Non-Repetitive Peak Forward Current
Peak Forward Surge Current
IFM
IFSURGE
450
2
Operating Junction Temperature
TJ + 175
Storage Temperature Range
TSTG
-65 to +200
UNIT
mW
V
mA
mA
A
oC
oC
PARAMETER
SYMBOL
Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
IR=500nA
IF=100mA
VR=80V
VR=0, f=1.0MHz
BV
VF
IR
Cj
Reverse Recovery Time
(Note 1)
trr
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100, IRR=1mA
MIN
80
--
--
MAX
--
1.2
500
4.0
4.0
UNIT
V
V
nA
pF
ns
Document Number: DS_S1403003
Version: C15

1SS133M Datasheet
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Forward Characteristics
100
10
TA=125oC
TA=75oC
1 TA=25oC
TA=-25oC
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage : VF (V)
Fig. 3 Capacitance Between Terminals Characteristics
3.0
f = 1 MHz
2.5
2.0
1.5
1.0
0.5
0.0
0
5 10 15 20 25 30
Reverse Voltage : VR (V)
Fig. 5 Surge Current Characteristics
100
1SS133M
Taiwan Semiconductor
10000
1000
100
10
Fig. 2 Reverse Characteristics
TA=100oC
TA=75oC
TA=50oC
TA=25oC
1
0
20 40 60 80 100 120
Reverse Voltage : VR (V)
Fig. 4 Reverse Recovery Time Characteristics
5
VR = 6 V
Irr = 1/10 IR
4
3
2
1
0
0
4 8 12 16
Forward Current : IF (mA)
20
Fig. 6 Reverse Recovery Time ( trr )
Measurement Circuit
10
1
0.1
1
10
100
1000
10000
Pulse Width : Tw (ms)
Document Number: DS_S1403003
Version: C15


Features Datasheet pdf Small Signal Product 1SS133M Taiwan Sem iconductor 300mW, Hermetically Sealed Glass Switching Diodes FEATURES - Fast switching device (trr < 4.0 ns) - Thro ugh-hole mount device type - DO-34 pack age (JEDEC DO-204) - Hermetically seale d glass - Compression bonded constructi on - All external surfaces are corrosio n resistant and leads are readily solde rable - RoHS compliant - Solder hot dip Tin (Sn) lead finish - Cathode indicat ed by polarity band - Marking code: 133 DO-34 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless other wise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 300 Working Inve rse Voltage WIV 90 Average Rectified Current IO 150 Non-Repetitive Peak Fo rward Current Peak Forward Surge Curren t IFM IFSURGE 450 2 Operating Juncti on Temperature TJ + 175 Storage Tempe rature Range TSTG -65 to +200 UNIT m W V mA mA A oC oC PARAMETER SYMBOL B reakdown Voltage Forward Voltage Revers e Leakage Current Junction Capacitance IR=500nA IF=100mA VR=80V.
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