2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS =45 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1075-0400 (Previous: ADE-208-750B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS...
