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RU30160S

Part Number	RU30160S
Manufacturer	Ruichips
Description	N-Channel Advanced Power MOSFET
Published	Apr 4, 2016
Detailed Description	RU30160S N-Channel Advanced Power MOSFET Features • 30V/160A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V • Super High Dense Cell Des...
Datasheet	RU30160S PDF File

Overview

RU30160S N-Channel Advanced Power MOSFET Features • 30V/160A, RDS (ON) =2.
3mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description D Applications • DC-DC Converters G S TO263 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Ther...

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