RU3030M2
N-Channel Advanced Power MOSFET
Features
30V/30A,
RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =15mΩ(Typ.)@VGS=4.5V
Super High Dense Cell Design Fast Switching Speed Low gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
Switching Application Systems
Pin Description
D D DD
SSS G PIN1
PDFN3...
