Part Number |
B1277 |
Manufacturers |
FGX |
Logo |
|
Description |
PNP Silison Transistor |
Datasheet |
B1277 Datasheet (PDF) |
■■APPLICATION:Audio power amplifier, High current application.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL RATING UNIT
VCBO
-30 V
VCEO
-30 V
VEBO -5 V
IC -2 A
PC 625 mW
TJ 150 ℃
Tstg -55~150 ℃
B1277
—PNP silicon —
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 100
320 VCE= -2V,IC= -500mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -30V,IE=0
Emitter Cut-off Current
IEBO
-0.1 µA VEB= -5V,IC=0
Collector-Base Breakdown Voltage BVCBO
-30
V IC= -0.1mA,IE=0
Collector-Emitter Breakdown Voltage BVCEO
-30
V IC= -10mA,IB=0
Emitter-Base Breakdown Voltage
BVEBO
-5
V IE= -1mA,IC=0
Base-Emitter on Voltage
VBE(ON)
-1 V VCE= -2V,IC= -500mA
Collector-Emitter Saturation Voltage VCE(sat)
-0.8 V IC= -2A,IB= -200mA
Gain bandwidth product Common B.