BN10 DIODE Datasheet

BN10 Datasheet, PDF, Equivalent


Part Number

BN10

Description

GLASS PASSIVATED SILICON DAMPING DIODE

Manufacture

ETC

Total Page 1 Pages
Datasheet
Download BN10 Datasheet


BN10
BN10(2CN3,BZU1)
GLASS PASSIVATED SILICON DAMPING DIODE
Features:
1. Silicon diffusion mesa.
2. Glass Passivated package.
3. Small volume, light weight.
4. Small high-temperature leakage.
5. Good thermal stability.
6. High reliability.
7. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Use for
Store temperature
Quality Class
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Voltage
Average Forward Voltage
Non-repeat Forward Surge Current
Peak Reverse Current
Peak Reverse Current
Junction Temperature
Reverse Recovery Time
Symbols Unit
T °C
VRRM
IF(AV)
VFM
VF
IFSM
IRM1
IRM2
Tjm
trr
V
A
V
V
A
uA
uA
°C
uS
(Ta = 25°C )
Specifications
Test Condition
Rectifier, damping circuit.
-55~+150
GS
50~1400
1.0
A~G: 1.8
H~J: 2.5
I=AIF(AV),A=3.1415926
1.0 I=IF(AV)
Single-phase industrial frequency
30
sine half wave 10ms
10 VR=VRRM, Ta=25°C
200 VR=VRRM, Ta=125°C
150
4 VR=10V,IF=50mA,RL=75ohms
SPECIFICATIONS:
AB
C
50V 100V 200V
D
300V
E
400V
F
600V
G
800V
H
1000V
IJ
1200V 1400V
Outline and Dimensions:
Contact: Jandy Lei
Tel.: 13991730782
QQ: 1142478250
sxqlljd@hotmail.com 4


Features BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1. Silicon di ffusion mesa. 2. Glass Passivated packa ge. 3. Small volume, light weight. 4. S mall high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840 611 TECHNICAL DATA: Parameter name Use for Store temperature Quality Class Pe ak Repetitive Reverse Voltage Average F orward Current Peak Forward Voltage Ave rage Forward Voltage Non-repeat Forward Surge Current Peak Reverse Current Pea k Reverse Current Junction Temperature Reverse Recovery Time Symbols Unit T °C VRRM IF(AV) VFM VF IFSM IRM1 IRM2 Tjm trr V A V V A uA uA °C uS (Ta = 25°C ) Specifications Test Condition Rectifier, damping circuit. -55~+150 GS 50~1400 1.0 A~G: 1.8 H~J: 2.5 I=AIF(AV),A=3.1415926 1.0 I=IF(AV) Si ngle-phase industrial frequency 30 sine half wave 10ms 10 VR=VRRM, Ta=25°C 200 VR=VRRM, Ta=125°C 150 4 VR=10V,I F=50mA,RL=75ohms SPECIFICATIONS: AB C 50V 100V 200V D 300V E 4.
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