NEW PRODUCT
DMN313DLT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 30V
RDS(ON) 2Ω @ VGS = 4V 3.2Ω @ VGS = 2.5V
ID TA = 25°C
270mA
210mA
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency ...
