H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1121-0700 (Previous: ADE-208-1516E)
Rev.7.00 Apr 07, 2006
Features
Low on-resistance RDS (on) = 4.6 mΩ typ.
Low drive current 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
123 H7...
