ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
V(BR)DSS 30V
RDS(ON)
67mΩ @ VGS = 4.5V 70mΩ @ VGS = 4.0V 98mΩ @ VGS = 2.5V
ID TA = +25°C
2.6A
2.5A
2.2A
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management...
