DatasheetsPDF.com

TSM060N03ECP

Taiwan Semiconductor
Part Number TSM060N03ECP
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM060N03ECP 30V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Perfor...
Datasheet PDF File TSM060N03ECP PDF File

TSM060N03ECP
TSM060N03ECP

Overview
TSM060N03ECP 30V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1.
Gate 2.
Drain 3.
Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 10V VGS = 4.
5V 30 6 9 Qg 11.
1 Unit V mΩ nC Features ● Fast switching ● G-S ESD Protection Diode Embedded Ordering Information Part No.
Package Packing TSM060N03ECP ROG TO-252 2.
5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram N-Channel MOSFET with ESD protection Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gat...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)