RU20T8M7
N-Channel Advanced Power MOSFET
Features
20V/8A,
RDS (ON) =13mΩ(Typ.)@VGS=4.5V RDS (ON) =14mΩ(Typ.)@VGS=4V RDS (ON) =16mΩ(Typ.)@VGS=3.1V RDS (ON) =18mΩ(Typ.)@VGS=2.5V
Super High Dense Cell Design Fast Switching Speed ESD Protected 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)
Applications
DC-DC Converter...