Triac. BCR16CM-12LB Datasheet

BCR16CM-12LB Triac. Datasheet pdf. Equivalent

Part BCR16CM-12LB
Description Triac
Feature BCR16CM-12LB 600V - 16A - Triac Medium Power Use Preliminary Datasheet R07DS1032EJ0400 (Previous: R.
Manufacture Renesas
Datasheet
Download BCR16CM-12LB Datasheet



BCR16CM-12LB
BCR16CM-12LB
600V - 16A - Triac
Medium Power Use
Preliminary Datasheet
R07DS1032EJ0400
(Previous: REJ03G0457-0300)
Rev.4.00
Feb 25, 2013
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
123
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Symbol
IT (RMS)
ITSM
I2t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Symbol
VDRM
VDSM
Ratings
16
170
121
5.0
0.5
10
2
– 40 to +150
– 40 to +150
2.1
Voltage class
12
600
720
Unit
V
V
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 125CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Page 1 of 8



BCR16CM-12LB
BCR16CM-12LB
Preliminary
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2




IDRM
VTM
VFGT
VRGT
VRGT
IFGT
IRGT
IRGT
— 2.0 mA Tj = 150C, VDRM applied
— 1.5 V Tc = 25C, ITM = 25 A,
Instantaneous measurement
— 1.5 V Tj = 25C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
— 30Note6 mA Tj = 25C, VD = 6 V, RL = 6 ,
— 30Note6 mA RG = 330
30Note6
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
10/1
— V Tj = 125C/150C, VD = 1/2 VDRM
1.4 C/W Junction to caseNote3 Note4
— V/s Tj = 125C/150C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Page 2 of 8





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