BRIDGE RECTIFIER. CBRHDSH1-200 Datasheet

CBRHDSH1-200 RECTIFIER. Datasheet pdf. Equivalent

Part CBRHDSH1-200
Description SCHOTTKY BRIDGE RECTIFIER
Feature CBRHDSH1-200 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a .
Manufacture Central Semiconductor
Datasheet
Download CBRHDSH1-200 Datasheet



CBRHDSH1-200
CBRHDSH1-200
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-200
is a full wave bridge rectifier in a durable surface mount
epoxy molded case, designed for high voltage full wave
rectification applications. The molding compound used in
this device has UL flammability classification 94V-O.
MARKING CODE: CSH120
HD DIP CASE
APPLICATIONS:
Input rectification for LED lighting
Power over ethernet (PoE) peripherals
General purpose full wave rectification
FEATURES:
Low forward voltage (0.76V TYP @ 1.0A)
Low leakage current (0.2μA TYP @ 200V)
High current rating: 1.0A
High voltage rating: 200V
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
PD
TJ
Tstg
ΘJA
200
200
140
1.0
20
1.2
-50 to +125
-50 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=200V
0.2
IR VR=200V, TA=100°C
BVR
IR=100μA
200 220
VF IF=1.0A
760
MAX
50
20
900
UNITS
V
V
V
A
A
W
°C
°C
°C/W
UNITS
μA
mA
V
mV
R1 (5-January 2012)



CBRHDSH1-200
CBRHDSH1-200
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
MARKING CODE: CSH120
R1 (5-January 2012)





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