Power MOSFET. XP151A11B0MR-G Datasheet

XP151A11B0MR-G MOSFET. Datasheet pdf. Equivalent

Part XP151A11B0MR-G
Description Power MOSFET
Feature XP151A11B0MR-G Power MOSFET ETR1117_003 ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Po.
Manufacture Torex Semiconductor
Datasheet
Download XP151A11B0MR-G Datasheet



XP151A11B0MR-G
XP151A11B0MR-G
Power MOSFET
ETR1117_003
GENERAL DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
APPLICATIONS
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
FEATURES
Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V
: Rds(on) = 0.17Ω@ Vgs = 4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
PIN CONFIGURATION/
MARKING
11 1 x
GGate
SSource
DDrain
* x represents production lot number.
EQUIVALENT CIRCUIT
PRODUCT NAMES
PRODUCTS
PACKAGE
ORDER UNIT
XP151A11B0MR
SOT-23
3,000/Reel
XP151A11B0MR-G(*)
SOT-23
3,000/Reel
(*) The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
ABSOLUTE MAXIMUM RATINGS
Ta = 25
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss
Gate - Source Voltage Vgss
Drain Current (DC)
Id
Drain Current (Pulse)
Idp
Reverse Drain Current
Idr
Channel Power Dissipation * Pd
Channel Temperature
Tch
Storage Temperature
Tstg
30
±20
1
4
1
0.5
150
-55~150
V
V
A
A
A
W
* When implemented on a ceramic PCB
1/5



XP151A11B0MR-G
XP151A11B0MR-G
ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds= 30V, Vgs= 0V
Vgs= ±20V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 0.5A, Vgs= 10V
Id= 0.5A, Vgs= 4.5V
Forward Transfer Admittance *1 | Yfs |
Id= 0.5A, Vds= 10V
Body Drain Diode
Forward Voltage
*1 Effective during pulse test.
Vf
If= 1A, Vgs= 0V
MIN.
-
-
1.0
-
-
-
TYP.
-
-
-
0.09
0.13
2.4
Ta = 25
MAX.
10
±10
3.0
0.12
0.17
UNITS
μA
μA
V
Ω
Ω
-S
- 0.8 1.1 V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
150
90
30
Ta = 25
MAX. UNITS
- pF
- pF
- pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id= 0.5A
Vdd= 10V
MIN.
-
-
-
-
TYP.
10
15
25
45
Ta = 25
MAX. UNITS
- ns
- ns
- ns
- ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
CONDITIONS
MIN.
Rth (ch-a) Implement on a ceramic PCB
-
TYP.
250
MAX. UNITS
- /W
2/5





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