XBS013R1DR-G Diode Datasheet

XBS013R1DR-G Datasheet, PDF, Equivalent


Part Number

XBS013R1DR-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
Datasheet
Download XBS013R1DR-G Datasheet


XBS013R1DR-G
XBS013R1DR-G
Schottky Barrier Diode, 100mA, 30V Type
FEATURES
Ultra Small Package
Low IR
APPLICATIONS
Low Current Rectification
ETR1617-005
ABSOLUTE MAXIMUM RATINGS
PARMETER
SYMBOL RATINGS
Repetitive Peak Voltage
VRM
30
Reverse Voltage (DC)
VR 30
Forward Current (Average)
Peak Forward Surge Current *1
IF(AV)
IFSM
100
0.5
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -40 +150
*1) 60Hz Half sine wave, 1 cycle, Non-Repetitive.
Ta=25
UNITS
V
V
mA
A
PACKAGING INFORMATION
0.30±0.05
0.20±0.03
MARKING RULE
TOP BOTTOM
2 (Product Number)
a,b,c,d,e Lot Number
Unit: mm
PRODUCT NAME
PRODUCT NAME
XBS013R1DR-G *
PACKAGE
USP-2B01
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
SYMBOL
VF1
IR
TEST CONDITIONS
IF=10mA
VR=10V
MIN.
-
-
LIMITS
TYP.
-
-
Ta=25
MAX.
0.46
0.3
UNITS
V
A
●NOTES ON USE
1. A package of this IC is a surface mounted package 0603 size with backside electrode structure. Compare to other packages, fixation strength
for the electrodes is weak due to its structure. Please keep away from mechanical stress to the product when mounting or after mounting.
2. If the IC is mounted close to a board break line or fixed in screws, the IC or its electrodes may be caused damage as results of board
deformation and mechanical stress.
1/3

XBS013R1DR-G
XBS013R1DR-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
100 100
Ta=125℃
10
75℃
25℃
1
0.1
0.0
-25℃
0.2 0.4 0.6
Forward Voltage VF (V)
(3) Forward Voltage vs. Operating Temperature
0.6
0.8
0.4
IF=10mA
0.2
1mA
Ta=125℃
10
100℃
1 75℃
0.1
25℃
0.01
0
10 20
Reverse Voltage VR (V)
(4) Reverse Current vs. Operating Temperature
30
100
VR=20V
10 10V
1
0.1
0.0
-50
0 50 100
Operating Temperature Ta (℃)
150
(5) Inter-Terminal Capacity vs. Reverse Voltage
25
20
15
10
5
Ta=25℃
0
0 10 20 30
Reverse Voltage VR (V)
0.01
0
50 100
Operating Temperature Ta (℃)
150
(6) Average Forward Current vs. Operating Temperature
0.2
0.1
0.0
0
50 100
Operating Temperature Ta (℃)
150
2/3


Features XBS013R1DR-G Schottky Barrier Diode, 10 0mA, 30V Type FEATURES Ultra Small Pac kage Low IR APPLICATIONS Low Current R ectification ETR1617-005 ABSOLUTE MAX IMUM RATINGS PARMETER SYMBOL RATINGS Repetitive Peak Voltage VRM 30 Reve rse Voltage (DC) VR 30 Forward Curren t (Average) Peak Forward Surge Current *1 IF(AV) IFSM 100 0.5 Junction Temp erature Tj 150 Storage Temperature Ra nge Tstg -40 +150 *1) 60Hz Half sine wave, 1 cycle, Non-Repetitive. Ta=25 U NITS V V mA A PACKAGING INFORMATION 0 .30±0.05 0.20±0.03 MARKING RULE TO P BOTTOM 2 (Product Number) a,b,c,d,e Lot Number ① Unit: mm PRODUCT NAME PRODUCT NAME XBS013R1DR-G * PACKAGE USP-2B01 * The “-G” suffix indicat es that the products are Halogen and An timony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. EL ECTRICAL CHARACTERISTICS PARAMETER For ward Voltage Reverse Current SYMBOL VF 1 IR TEST CONDITIONS IF=10mA VR=10V MIN. - LIMITS TYP. - Ta=25 MAX.
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