XBS104V14R-G Diode Datasheet

XBS104V14R-G Datasheet, PDF, Equivalent


Part Number

XBS104V14R-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
Datasheet
Download XBS104V14R-G Datasheet


XBS104V14R-G
XBS104V14R-G
Schottky Barrier Diode, 1A, 40V Type
ETR1610-002
FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
Environmentally Friendly
: VF=0.365V (TYP.)
: IF(AV)=1A
: VRM=40V
: EU RoHS Compliant, Pb Free
APPLICATIONS
Rectification
Protection against reverse connection of battery
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
40 V
Reverse Voltage (DC)
VR 40 V
Forward Current (Average)
IF(AV)
1A
Non Continuous
Forward Surge Current*1
IFSM
20
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55+150
*1Non continuous high amplitude 60Hz half-sine wave.
A
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
MARKING RULE
: 0 (Product Number)
: Assembly Lot Number
PACKAGING INFORMATION
Cathode Bar
SOD-123A
Unit : mm
PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104V14R-G
SOD-123A(Halogen & Antimony free)
XBS104V14R
SOD-123A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2trr measurement circuit
VF1 IF=100mA
VF2 IF=500mA
VF3 IF=1A
IR VR=40V
Ct VR=1V , f=1MHz
trr IF=IR=10mA , irr=1mA
Bias Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.23
0.30
0.365
0.25
150
41
Ta=25
MAX.
0.315
0.385
0.41
2
-
-
UNIT
V
V
V
mA
pF
ns
1/3

XBS104V14R-G
XBS104V14R-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
1
Ta=125℃
0.1 75℃
-25℃
25℃
100
10 Ta=100℃
75℃
1
0.1
0.01
25℃
0.01
0.001
0
0.2 0.4
FoFrowrawradrdVVolotaltgaege:  VVF (FV(V) )
(3) Forward Voltage vs. Operating Temperature
0.6
0.6
0.4
IF=1A
0.2 0.5A
0.1A
0.0
-50
0
50 100
OpOepreartiantginTgeTmepmepreartautruer:eT aT(a(℃) )
150
(5) Inter-Terminal Capacity vs. Reverse Voltage
500
0.001
0
10 20 30
RReevveerrsseeVVooltlataggee: VVRR(V(V))
(4) Reverse Current vs. Operating Temperature
40
100
10
VR=10V
5V
1V
1
0.1
0.01
0.001
0
50 100
OOppeerraattiningg TTeemmppeerraattuurree: TTaa((℃))
150
(6) Average Forward Current vs. Operating Temperature
2.0
400
1.5
300
1.0
200
0.5
100
0
0 10 20 30
ReRveevresreseVoVlotaltgaeg:eV RV(RV(V) )
40
0.0
0
50 100
OOppeerraattiinngg TTeemmppeerraattuurree : TTaa (())
150
2/3


Features XBS104V14R-G Schottky Barrier Diode, 1A, 40V Type ETR1610-002 ■FEATURES For ward Voltage Forward Current Repetitive Peak Reverse Voltage Environmentally F riendly : VF=0.365V (TYP.) : IF(AV)=1A : VRM=40V : EU RoHS Compliant, Pb Free ■APPLICATIONS ●Rectification ●P rotection against reverse connection of battery ■ABSOLUTE MAXIMUM RATINGS T a=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 40 V Reverse Voltage (DC) VR 40 V Fo rward Current (Average) IF(AV) 1A No n Continuous Forward Surge Current*1 I FSM 20 Junction Temperature Tj 125 Storage Temperature Range Tstg -55~+ 150 *1: Non continuous high amplitud e 60Hz half-sine wave. A ℃ ℃ * Wh en the IC is operated continuously unde r high load conditions such as high tem perature, high current and high voltage , it may have the case that reliability reduces drastically even if under the absolute maximum ratings. Adequate “D erating” should be taken into consideration while designing. ■MARKING RULE ①: 0 (Pro.
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