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STPSC8TH13TI

STMicroelectronics

Dual 650V power Schottky silicon carbide diode


Description
STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet -...



STMicroelectronics

STPSC8TH13TI

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