SiC Schottky Barrier Diode
Description
SCS210AG
SiC Schottky Barrier Diode
VR 650V IF 10A QC 15nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer type
lOutline
TO-220AC
(1)
Datasheet
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Ree...
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