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RQK2001HQDQA

Part Number	RQK2001HQDQA
Manufacturer	Renesas
Description	Silicon N-Channel MOS FET
Published	May 14, 2016
Detailed Description	RQK2001HQDQA Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS :...
Datasheet	RQK2001HQDQA PDF File

Overview

RQK2001HQDQA Silicon N Channel MOS FET Power Switching Features • High drain to source voltage and Low gate drive VDSS : 200 V and VGSS : ±30 V • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is "HQ".
Preliminary Datasheet R07DS0311EJ0300 Rev.
3.
00 Jan 10, 2014 3 D 2 G S 1 1.
Source 2.
Gate 3.
Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Channel temperature ...

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RQK2001HQDQA Silicon N-Channel MOS FET - Renesas

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