MOS FIELD EFFECT TRANSISTOR
Description
NP16N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) De...
Similar Datasheet
