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NP55N04SLG

Renesas
Part Number NP55N04SLG
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published May 15, 2016
Detailed Description NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 Description The NP...
Datasheet PDF File NP55N04SLG PDF File

NP55N04SLG
NP55N04SLG

Overview
NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.
1.
00 Feb 23, 2011 Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.
5 mΩ MAX.
(VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.
5 mΩ MAX.
(VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX.
(VGS = 4.
5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protection diode built-in Ordering Information Part No.
LEAD PLATING PACKING NP55N04SLG-E1-AY ∗1 NP55N04SLG-E2-AY ∗1 Pure Sn (Tin) Tape 2500 p/reel Note: ∗1.
Pb-free (This product does not contain Pb in external electrode.
) Package TO-252 (MP-3ZK) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel ...


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