P-Channel PowerTrench MOSFET
Description
FDMS86163P P-Channel PowerTrench® MOSFET
FDMS86163P
P-Channel PowerTrench® MOSFET
-100 V, -50 A, 22 mΩ
Features
Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
This product is optimised for fast switching applications as well ...
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