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MRFE6S9160HR3

Freescale Semiconductor
Part Number MRFE6S9160HR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistors
Published May 19, 2016
Detailed Description Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs ...
Datasheet PDF File MRFE6S9160HR3 PDF File

MRFE6S9160HR3
MRFE6S9160HR3

Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz.
Suitable for multicarrier amplifier applications.
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Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.
8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.
Features • Charact...


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