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AP4503BGM-HF

Part Number	AP4503BGM-HF
Manufacturer	Advanced Power Electronics
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	May 23, 2016
Detailed Description	Advanced Power Electronics Corp. AP4503BGM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Sim...
Datasheet	AP4503BGM-HF PDF File

Overview

Advanced Power Electronics Corp.
AP4503BGM-HF Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1 S1 Description AP4503B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 S1 30V 18mΩ 8.
2A -30V 29mΩ -6.
6A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TA=25℃ ID@TA=70℃ IDM Gate-Source Voltage Drain Current3 , VGS @ 10V Drain Current3 , VGS @ 10V Pulsed Drain Current1 +20 +20 8.
2 -6.
6 6.
6 -5.
3 30 -30 V A A A PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 2 -55 to 150 -55 to 150 W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.
5 Unit ℃/W 1 201501053 AP4503BGM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Outp...

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AP4503BGM-HF N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Advanced Power Electronics

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