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IS49NLC36800

Part Number	IS49NLC36800
Manufacturer	Integrated Silicon Solution
Description	288Mb Common I/O RLDRAM 2 Memory
Published	May 27, 2016
Detailed Description	IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory JANUARY 2020 FEATURES  400MH...
Datasheet	IS49NLC36800 PDF File

Overview

IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory JANUARY 2020 FEATURES  400MHz DDR operation (800Mb/s/pin data rate)  28.
8Gb/s peak bandwidth (x36 at 400 MHz clock frequency)  Reduced cycle time (15ns at 400MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms)  8 internal banks  Non-multiplexed addresses (address multiplexing option available)  SRAM-type interface  Programmable READ latency (RL), row cycle time, and burst sequence length  Balanced READ and WRITE latencies in order to optimize data bus utilization  Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges ...

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